• 參數(shù)資料
    型號(hào): M2V64S30BTP-6
    廠商: Mitsubishi Electric Corporation
    英文描述: 64M bit Synchronous DRAM
    中文描述: 6400位同步DRAM
    文件頁(yè)數(shù): 29/52頁(yè)
    文件大小: 674K
    代理商: M2V64S30BTP-6
    Apr. '99
    MITSUBISHI LSIs
    MITSUBISHI ELECTRIC
    SDRAM (Rev.1.2)
    M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT)
    M2V64S30BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 2097152-WORD x 8-BIT)
    M2V64S40BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 1048576-WORD x 16-BIT)
    64M bit Synchronous DRAM
    29
    ABSOLUTE MAXIMUM RATINGS
    RECOMMENDED OPERATING CONDITIONS
    (Ta=0 ~ 70'C, unless otherwise noted)
    CAPACITANCE
    (Ta=0 ~ 70'C, Vdd = VddQ = 3.3 ± 0.3v, Vss = VssQ = 0v, unless otherwise noted)
    Symbol
    Parameter
    Conditions
    Ratings
    Unit
    Vdd
    Supply Voltage
    with respect to Vss
    -0.5 ~ 4.6
    V
    VddQ
    Supply Voltage for Output
    with respect to VssQ
    -0.5 ~ 4.6
    V
    VI
    Input Voltage
    with respect to Vss
    -0.5 ~ Vdd+0.5
    V
    VO
    Output Voltage
    with respect to VssQ
    -0.5 ~ VddQ+0.5
    V
    IO
    Output Current
    50
    mA
    Pd
    Power Dissipation
    Ta = 25 'C
    1000
    mW
    Topr
    Operating Temperature
    0 ~ 70
    'C
    Tstg
    Storage Temperature
    -65 ~ 150
    'C
    Symbol
    Parameter
    Limits
    Unit
    Min.
    Typ.
    Max.
    Vdd
    Supply Voltage
    3.0
    3.3
    3.6
    V
    Vss
    Supply Voltage
    0
    0
    0
    V
    VddQ
    Supply Voltage for Output
    3.0
    3.3
    3.6
    V
    VssQ
    Supply Voltage for Output
    0
    0
    0
    V
    VIH
    High-Level Input Voltage all inputs
    2.0
    Vdd+0.3
    V
    VIL
    Low-Level Input Voltage all inputs
    -0.3
    0.8
    V
    Note:*
    VIH (max) = Vdd+2.0V AC for pulse width<=3ns acceptable.
    VIL(min) = -2V AC for pulse width<=3ns acceptable.
    Symbol
    Parameter
    Test Condition
    max.
    Unit
    CI(A)
    Input Capacitance, address pin
    VI=Vss
    5
    pF
    CI(C)
    Input Capacitance, control pin
    f=1MHz
    5
    pF
    CI(K)
    Input Capacitance, CLK pin
    Vi=25mVrms
    4
    pF
    CI/O
    Input Capacitance, I/O pin
    6.5
    pF
    min.
    2.5
    2.5
    2.5
    4
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