參數(shù)資料
型號(hào)： M2V28S30TP-7
廠商： Mitsubishi Electric Corporation
英文描述： 128 x 64 pixel format, LED Backlight available
中文描述： 128M的同步DRAM
文件頁(yè)數(shù)： 6/52頁(yè)
文件大?。?/td> 639K
代理商： M2V28S30TP-7
M2V28S20TP-6,-7,-8
M2V28S30TP-6,-7,-7L,-8,-8L
M2V28S40TP-7,-7L,-8,-8L
Jun. '99
MITSUBISHI LSIs
SDRAM (Rev. 1.0E)
128M Synchronous DRAM
(4-BANK x 8,388,608-WORD x 4-BIT)
(4-BANK x 4,194,304-WORD x 8-BIT)
(4-BANK x 2,097,152-WORD x 16-BIT)
6
BASIC FUNCTIONS
The M2V28S30TP provides basic functions, bank (row) activate, burst read / write, bank
(row) precharge, and auto / self refresh.
Each command is defined by control signals of /RAS, /CAS and /WE at CLK rising edge. In
addition to 3 signals, /CS ,CKE and A10 are used as chip select, refresh option, and precharge option,
respectively.
To know the detailed definition of commands, please see the command truth table.
/CS
Chip Select : L=select, H=deselect
/RAS
Command
/CAS
Command
/WE
Command
CKE
Refresh Option @ refresh command
A10
Precharge Option @ precharge or read/write command
CLK
define basic commands
Activate (ACT) [/RAS =L, /CAS =/WE =H]
ACT command activates a row in an idle bank indicated by BA.
Read (READ) [/RAS =H, /CAS =L, /WE =H]
READ command starts burst read from the active bank indicated by BA. First output data
appears after /CAS latency. When A10 =H at this command, the bank is deactivated after the burst
read (auto-precharge,
READA
).
Write (WRITE) [/RAS =H, /CAS =/WE =L]
WRITE command starts burst write to the active bank indicated by BA. Total data length to
be written is set by burst length. When A10 =H at this command, the bank is deactivated after the
burst write (auto-precharge,
WRITEA
).
Precharge (PRE) [/RAS =L, /CAS =H, /WE =L]
PRE command deactivates the active bank indicated by BA. This command also terminates
burst read / write operation. When A10 =H at this command, all banks are deactivated (precharge all,
PREA
).
Auto-Refresh (REFA) [/RAS =/CAS =L, /WE =CKE =H]
REFA command starts auto-refresh cycle. Refresh address including bank address are
generated internally. After this command, the banks are precharged automatically.
相關(guān)PDF資料
PDF描述
M2V28S40TP-7 128 x 64 pixel format, LED Backlight available
M2V28S30ATP 128M Synchronous DRAM
M2V28S30ATP-6 128M Synchronous DRAM
M2V28S30ATP-6L 128M Synchronous DRAM
M2V28S30ATP-7 128M Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M2V28S30TP-7L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Synchronous DRAM
M2V28S30TP-8 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Synchronous DRAM
M2V28S30TP-8L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Synchronous DRAM
M2V28S40ATP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Synchronous DRAM
M2V28S40ATP-6 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Synchronous DRAM
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