- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370826 > M2V28S30ATP-7L (Mitsubishi Electric Corporation) 128M Synchronous DRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | M2V28S30ATP-7L |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 128M Synchronous DRAM |
| 中文描述： | 128M的同步DRAM |
| 文件頁數(shù)： | 16/52頁 |
| 文件大小： | 639K |
| 代理商： | M2V28S30ATP-7L |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁當(dāng)前第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁
M2V28S20TP-6,-7,-8
M2V28S30TP-6,-7,-7L,-8,-8L
M2V28S40TP-7,-7L,-8,-8L
Jun. '99
MITSUBISHI LSIs
SDRAM (Rev. 1.0E)
128M Synchronous DRAM
(4-BANK x 8,388,608-WORD x 4-BIT)
(4-BANK x 4,194,304-WORD x 8-BIT)
(4-BANK x 2,097,152-WORD x 16-BIT)
16
POWER ON SEQUENCE
Before starting normal operation, the following power on sequence is necessary to prevent a
SDRAM from damaged or malfunctioning.
1. Apply power and start clock. Attempt to maintain CKE high, DQM high and NOP condition at
the inputs.
2. Maintain stable power, stable clock, and NOP input conditions for a minimum of 200μs.
3. Issue precharge commands for all banks. (PRE or PREA)
4. After all banks become idle state (after tRP), issue 8 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
After these sequence, the SDRAM is idle state and ready for normal operation.
MODE REGISTER
Burst Length, Burst Type and /CAS Latency can be
programmed by setting the mode register (MRS). The mode
register stores these data until the next MRS command, which
may be issued when all banks are in idle state. After tRSC
from a MRS command, the SDRAM is ready for new
command.
R: Reserved for Future Use
BL
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
BURST
LENGTH
BT= 0
1
2
4
8
R
R
R
FP
BT= 1
1
2
4
8
R
R
R
R
0
1
BURST
TYPE
SEQUENTIAL
INTERLEAVED
A11 A10 A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
BA1
BA0
0
0
0
0
0
LTMODE
BT
BL
0
0
CL
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
LATENCY
MODE
/CAS LATENCY
2
3
R
R
R
R
R
R
/CS
/RAS
/CAS
/WE
BA0,1 A11-A0
CLK
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M2V28S30ATP-8 | 128M Synchronous DRAM |
| M2V28S30ATP-8L | 128M Synchronous DRAM |
| M2V28S30TP | 128M Synchronous DRAM |
| M2V28S40ATP | 128M Synchronous DRAM |
| M2V28S40ATP-6 | 128M Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M2V28S30ATP-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Synchronous DRAM |
| M2V28S30ATP-8L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Synchronous DRAM |
| M2V28S30AVP-7 | 制造商:Mitsubishi Electric 功能描述: |
| M2V28S30TP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Synchronous DRAM |
| M2V28S30TP-6 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Synchronous DRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。