參數資料
型號: M2S56D30AKT-75
廠商: Mitsubishi Electric Corporation
英文描述: 256M Double Data Rate Synchronous DRAM
中文描述: 256M雙數據速率同步DRAM
文件頁數: 35/40頁
文件大?。?/td> 768K
代理商: M2S56D30AKT-75
35
MITSUBISHI ELECTRIC
Mar. '02
MITSUBISHI LSIs
DDR SDRAM
(Rev.1.44)
M2S56D20/ 30/ 40ATP -75AL, -75A, -75L, -75, -10L, -10
M2S56D20/ 30/ 40AKT -75AL, -75A, -75L, -75, -10L, -10
256M Double Data Rate Synchronous DRAM
Burst write operation can be interrupted by precharge of the same or all bank. Random column access is
allowed. tWR is referenced from the first positive CLK edge after the last data input.
[Write interrupted by Precharge]
Write Interrupted by Precharge (BL=8, CL=2.5)
Command
A0-9,11
A10
BA0,1
DQ
WRITE
Yi
0
00
PRE
00
Dai0
Dai1
QS
DM
tWR
/CLK
CLK
相關PDF資料
PDF描述
M2V56D40AKT-75 256M Double Data Rate Synchronous DRAM
M2S56D40AKT-75 256M Double Data Rate Synchronous DRAM
M2V56D20AKT-75A 256M Double Data Rate Synchronous DRAM
M2S56D20AKT-75A 256M Double Data Rate Synchronous DRAM
M2V56D30AKT-75A Circular Connector; No. of Contacts:5; Series:MS27484; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:10-5 RoHS Compliant: No
相關代理商/技術參數
參數描述
M2S56D30AKT-75A 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM
M2S56D30AKT-75AL 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM
M2S56D30AKT-75L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM
M2S56D30ATP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM
M2S56D30ATP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM