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參數(shù)資料
| 型號(hào)： | M29W160EB90N6 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| 中文描述： | 16兆位（含2Mb x8或1兆x16插槽，引導(dǎo)塊）3V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 5/40頁(yè) |
| 文件大?。?/td> | 665K |
| 代理商： | M29W160EB90N6 |
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M29W160ET, M29W160EB
SUMMARY DESCRIPTION
The M29W160E is a 16 Mbit (2Mb x8 or 1Mb x16)
non-volatile memory that can be read, erased and
reprogrammed. These operations can be per-
formed using a single low voltage (2.7 to 3.6V)
supply. On power-up the memory defaults to its
Read mode where it can be read in the same way
as a ROM or EPROM.
The memory is divided into blocks that can be
erased independently so it is possible to preserve
valid data while old data is erased. Each block can
be protected independently to prevent accidental
Program or Erase commands from modifying the
memory. Program and Erase commands are writ-
ten to the Command Interface of the memory. An
on-chip Program/Erase Controller simplifies the
process of programming or erasing the memory by
taking care of all of the special operations that are
required to update the memory contents.
The end of a program or erase operation can be
detected and any error conditions identified. The
command set required to control the memory is
consistent with JEDEC standards.
The blocks in the memory are asymmetrically ar-
ranged, see Figures 5 and 6, Block Addresses.
four additional blocks. The 16 KByte Boot Block
can be used for small initialization code to start the
microprocessor, the two 8 KByte Parameter
Blocks can be used for parameter storage and the
remaining 32K is a small Main Block where the ap-
plication may be stored.
Chip Enable, Output Enable and Write Enable sig-
nals control the bus operation of the memory.
They allow simple connection to most micropro-
cessors, often without additional logic.
The memory is offered TSOP48 (12 x 20mm) and
TFBGA48 (0.8mm pitch) packages. The memory
is supplied with all the bits erased (set to ’1’).
Figure 2. Logic Diagram
Table 1. Signal Names
AI06849B
20
A0-A19
W
DQ0-DQ14
VCC
M29W160ET
M29W160EB
E
VSS
15
G
RP
DQ15A–1
RB
BYTE
A0-A19
Address Inputs
DQ0-DQ7
Data Inputs/Outputs
DQ8-DQ14
Data Inputs/Outputs
DQ15A–1
Data Input/Output or Address Input
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Block Temporary Unprotect
RB
Ready/Busy Output
BYTE
Byte/Word Organization Select
V
CC
Supply Voltage
V
SS
Ground
NC
Not Connected Internally
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29W160EB90N6E | 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| M29W160EB90N6F | 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| M29W160ET90N6 | 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| M29W160ET90N6E | 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| M29W160DB | 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W160EB90N6E | 功能描述:閃存 16M (2Mx8 or 1Mx16) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W160EB90N6F | 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| M29W160EB90N6T | 功能描述:閃存 2Mx8 or 1Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W160EB90ZA6 | 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| M29W160EB90ZA6E | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
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