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參數(shù)資料
| 型號(hào)： | M29W102BT90N6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 1 Mbit 64Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| 中文描述： | 1兆位64Kb的x16插槽，引導(dǎo)塊低壓?jiǎn)坞娫撮W存 |
| 文件頁數(shù)： | 1/20頁 |
| 文件大?。?/td> | 154K |
| 代理商： | M29W102BT90N6T |
1/20
March 2000
M29W102BT
M29W102BB
1 Mbit (64Kb x16, Boot Block)
Low Voltage Single Supply Flash Memory
I
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
I
ACCESS TIME: 50ns
I
PROGRAMMING TIME
– 10μs per Word typical
I
5 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 2 Main Blocks
I
PROGRAM/ERASE CONTROLLER
– Embedded Word Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
I
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
I
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
I
TEMPORARY BLOCK UNPROTECTION
MODE
I
LOW POWER CONSUMPTION
– Standby and Automatic Standby
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
I
M28F102 COMPATIBLE
– Pin-out and Read Mode
I
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W102BT: 0099h
– Bottom Device Code M29W102BB: 0098h
TSOP40 (N)
10 x 14mm
Figure 1. Logic Diagram
AI02785
16
A0-A15
W
DQ0-DQ15
VCC
M29W102BT
M29W102BB
E
VSS
16
G
RP
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