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參數(shù)資料
| 型號： | M29W040-100N1TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High Speed High Drive Precision Operational Amplifier 8-SOIC -55 to 125 |
| 中文描述： | 4兆位512KB的× 8，統(tǒng)一座低電壓單電源閃存 |
| 文件頁數(shù)： | 1/31頁 |
| 文件大?。?/td> | 205K |
| 代理商： | M29W040-100N1TR |
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AI02074
19
A0-A18
W
DQ0-DQ7
VCC
M29W040
G
E
VSS
8
Figure 1. LogicDiagram
M29W040
4 Mbit (512Kb x8, Uniform Block)
Low Voltage Single Supply Flash Memory
NOT FOR NEW DESIGN
M29W040 is replacedby the M29W040B
2.7Vto 3.6VSUPPLYVOLTAGE for
PROGRAM,ERASE and READ OPERATIONS
FASTACCESS TIME:100ns
BYTE PROGRAMMING TIME: 12
μ
s typical
ERASETIME
– Block: 1.5 sec typical
– Chip: 2.5 sec typical
PROGRAM/ERASECONTROLLER (P/E.C.)
– ProgramByte-by-Byte
– Data Polling and Togglebits Protocolfor
P/E.C. Status
MEMORYERASE in BLOCKS
– 8 UniformBlocks of 64 KByteseach
– Block Protection
– MultiblockErase
ERASE SUSPENDand RESUME MODES
LOWPOWER CONSUMPTION
– Read mode: 8mAtypical (at 12MHz)
– Stand-by mode: 20
μ
Atypical
– AutomaticStand-by mode
POWER DOWNSOFTWARE COMMAND
– Power-down mode: 1
μ
Atypical
100,000PROGRAM/ERASECYCLES per
BLOCK
20 YEARS DATARETENTION
– Defectivity below 1ppm/year
ELECTRONICSIGNATURE
– ManufacturerCode: 20h
– Device Code: E3h
Table1. Signal Names
A0-A18
Address Inputs
DQ0-DQ7
Data Input / Outputs
E
Chip Enable
G
Output Enable
W
Write Enable
V
CC
Supply Voltage
V
SS
Ground
PLCC32 (K)
TSOP32 (N)
8 x 20mm
November 1999
1/31
This is informationona product stillin productionbut not recommendedfor new designs.
TSOP32 (NZ)
8 x 14mm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29W040-100N5TR | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-100NZ1R | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-120NZ1R | ; Capacitance:180pF; Capacitance Tolerance:+/- 5 %; Working Voltage, DC:300V; Package/Case:1210; Series:SQ; Dielectric Material:Ceramic; Leaded Process Compatible:Yes; Mounting Type:PCB Surface Mount |
| M29W040-150NZ1R | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-200NZ1R | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W040-100N5R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-100N5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-100N6R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-100N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-100NZ1R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
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