參數(shù)資料
型號(hào)： M29F100-B70M6TR
廠商： 意法半導(dǎo)體
英文描述： Hex 2-Input AND Drivers 20-PDIP 0 to 70
中文描述： 1兆位的128KB x8或64Kb的x16插槽，啟動(dòng)座單電源閃存
文件頁數(shù)： 1/30頁
文件大小： 207K
代理商： M29F100-B70M6TR
AI01974
16
A0-A15
W
DQ0-DQ14
VCC
M29F100T
M29F100B
E
VSS
15
G
RP
DQ15A–1
BYTE
RB
Figure 1. Logic Diagram
M29F100T
M29F100B
1 Mbit (128Kb x8 or 64Kb x16, Boot Block)
Single Supply Flash Memory
5V
± 10% SUPPLY VOLTAGE for PROGRAM,
ERASE and READ OPERATIONS
FAST ACCESS TIME: 70ns
FAST PROGRAMMING TIME
–10
s by Byte / 16s by Word typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte or Word-by-Word
– Status Register bits and Ready/Busy Output
MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI-BLOCK PROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code, M29F100T: 00D0h
– Device Code, M29F100B: 00D1h
DESCRIPTION
The M29F100 is a non-volatile memory that may
be erased electrically at the block or chip level and
programmed in-system on a Byte-by-Byteor Word-
by-Word basis using only a single 5V VCC supply.
For Program and Erase operations the necessary
high voltages are generated internally. The device
can also be programmed in standard program-
mers.
The array matrix organisation allows each block to
be erased and reprogrammed without affecting
other blocks. Blocks can be protected against pro-
graming and erase on programming equipment,
and temporarily unprotected to make changes in
the application. Each block can be programmed
and erased over 100,000 cycles.
July 1998
1/30
44
1
SO44 (M)
TSOP48 (N)
12 x 20 mm
相關(guān)PDF資料
PDF描述
M29F100-B70N1R 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory
M29F100-B70N1TR 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory
M29F100-B70N3R 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory
M29F100-B70N3TR 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory
M29F100-B70N6R 10-Bit Bus-Interface Flip-Flops With 3-State Outputs 24-SOIC 0 to 70
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29F100BB70M1 功能描述:閃存 128Kx8 or 64Kx16 70n RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F100BB90M1 功能描述:閃存 128Kx8 or 64Kx16 90n RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F100BB90N1 功能描述:閃存 128Kx8 or 64Kx16 90n RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F100BT70M1 功能描述:閃存 SO-44 128KX8 64KX16 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F100BT90M1 功能描述:閃存 128Kx8 or 64Kx16 90n RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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