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M28W160ECT, M28W160ECB
22/50
Table 14. DC Characteristics
Symbol
I
LI
Input Leakage Current
I
LO
Output Leakage Current
I
DD
Supply Current (Read)
Supply Current (Stand-by or
Automatic Stand-by)
Parameter
Test Condition
0V
≤
V
IN
≤
V
DDQ
0V
≤
V
OUT
≤
V
DDQ
E = V
SS
, G = V
IH
, f = 5MHz
E = V
DDQ
± 0.2V,
RP = V
DDQ
± 0.2V
Min
Typ
Max
±1
±10
Unit
μA
μA
9
18
mA
I
DD1
15
50
μA
I
DD2
Supply Current
(Reset)
RP = V
SS
± 0.2V
15
50
μA
I
DD3
Supply Current (Program)
Program in progress
V
PP
= 12V ± 5%
Program in progress
V
PP
= V
DD
Erase in progress
V
PP
= 12V ± 5%
Erase in progress
V
PP
= V
DD
E = V
DDQ
± 0.2V,
Erase suspended
5
10
mA
10
20
mA
I
DD4
Supply Current (Erase)
5
20
mA
10
20
mA
I
DD5
Supply Current
(Program/Erase Suspend)
Program Current
(Read or Stand-by)
Program Current
(Read or Stand-by)
Program Current (Reset)
15
50
μA
I
PP
V
PP
> V
DD
400
μA
I
PP1
V
PP
≤
V
DD
1
5
μA
I
PP2
RP = V
SS
± 0.2V
Program in progress
V
PP
= 12V ± 5%
Program in progress
V
PP
= V
DD
Erase in progress
V
PP
= 12V ± 5%
Erase in progress
V
PP
= V
DD
1
5
μA
I
PP3
Program Current (Program)
1
10
mA
1
5
μA
I
PP4
Program Current (Erase)
3
10
mA
1
5
μA
V
IL
Input Low Voltage
–0.5
–0.5
0.4
0.8
V
V
V
V
DDQ
≥
2.7V
V
IH
Input High Voltage
V
DDQ
–0.4
0.7 V
DDQ
V
DDQ
+0.4
V
DDQ
+0.4
V
DDQ
≥
2.7V
V
V
OL
Output Low Voltage
I
OL
= 100μA, V
DD
= V
DD
min,
V
DDQ
= V
DDQ
min
I
OH
= –100μA, V
DD
= V
DD
min,
V
DDQ
= V
DDQ
min
0.1
V
V
OH
Output High Voltage
V
DDQ
–0.1
V
V
PP1
Program Voltage (Program or
Erase operations)
Program Voltage
(Program or Erase
operations)
Program Voltage
(Program and Erase lock-out)
V
DD
Supply Voltage (Program
and Erase lock-out)
1.65
3.6
V
V
PPH
11.4
12.6
V
V
PPLK
1
V
V
LKO
2
V