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參數(shù)資料
| 型號： | M28C256-12NS1T |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | EEPROM |
| 英文描述： | 256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
| 中文描述： | 256千位（的32KB × 8）與軟件數(shù)據(jù)保護并行的EEPROM |
| 文件頁數(shù)： | 9/21頁 |
| 文件大小： | 132K |
| 代理商： | M28C256-12NS1T |
Symbol
Alt
Parameter
TestCondition
M28256
Unit
-90
-12
-15
-20
min
max
min
max
min
max
min
max
t
AVQV
t
ACC
Address Valid to
Output Valid
E = V
IL
, G = V
IL
90
120
150
200
ns
t
ELQV
t
CE
Chip Enable Low to
Output Valid
G = V
IL
90
120
150
200
ns
t
GLQV
t
OE
Output EnableLow
to Output Valid
E = V
IL
40
45
50
50
ns
t
EHQZ(1)
t
DF
Chip Enable High to
Output Hi-Z
G = V
IL
0
40
0
45
0
50
0
50
ns
t
GHQZ(1)
t
DF
Output EnableHigh
to Output Hi-Z
E = V
IL
0
40
0
45
0
50
0
50
ns
t
AXQX
t
OH
Address Transition
to Output Transition
E = V
IL
, G = V
IL
0
0
0
0
ns
Note:
1. Output Hi-Z is defined as the point at which datais no longer driven.
Table10. ReadMode AC Characteristics
(T
A
= 0 to 70
°
C or –40 to85
°
C; V
CC
= 4.5V to 5.5V)
Symbol
Alt
Parameter
TestCondition
M28256-W
Unit
-12
-15
-20
-25
min
max
min
max
min
max
min
max
t
AVQV
t
ACC
Address Valid to
Output Valid
E = V
IL
, G = V
IL
120
150
200
250
ns
t
ELQV
t
CE
Chip Enable Low to
Output Valid
G = V
IL
120
150
200
250
ns
t
GLQV
t
OE
Output EnableLow
to Output Valid
E = V
IL
45
70
80
100
ns
t
EHQZ
(1)
t
DF
Chip Enable High to
Output Hi-Z
G = V
IL
0
45
0
50
0
55
0
60
ns
t
GHQZ
(1)
t
DF
Output EnableHigh
to Output Hi-Z
E = V
IL
0
45
0
50
0
55
0
60
ns
t
AXQX
t
OH
Address Transition
to Output Transition
E = V
IL
, G = V
IL
0
0
0
0
ns
Note:
1. Output Hi-Z is defined as the point at which datais no longer driven.
Table11. ReadMode AC Characteristics
(T
A
= 0 to 70
°
C or –40 to85
°
C; V
CC
= 2.7V to 3.6V)
9/21
M28256
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M28C256-12NS6T | 256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
| M28C256-12WBS1T | 256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
| M28C256-12WBS6T | 256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
| M28C256-12WKA1T | 256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
| M28C256-12WKA6T | 256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M28C256-12NS6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
| M28C256-12WBS1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
| M28C256-12WBS6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
| M28C256-12WKA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
| M28C256-12WKA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
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