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參數(shù)資料
| 型號(hào)： | M28C256-12MS6T |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | EEPROM |
| 英文描述： | 256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
| 中文描述： | 256千位（的32KB × 8）與軟件數(shù)據(jù)保護(hù)并行的EEPROM |
| 文件頁(yè)數(shù)： | 11/21頁(yè) |
| 文件大?。?/td> | 132K |
| 代理商： | M28C256-12MS6T |
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Symbol
Alt
Parameter
TestCondition
M28256-W
Unit
Min
Max
t
AVWL
t
AS
Address Valid to Write Enable Low
E = V
IL
, G = V
IH
0
ns
t
AVEL
t
AS
Address Valid to Chip Enable Low
G = V
IH
, W = V
IL
0
ns
t
ELWL
t
CES
Chip Enable Low to Write Enable Low
G = V
IH
0
ns
t
GHWL
t
OES
Output Enable High to Write Enable
Low
E = V
IL
0
ns
t
GHEL
t
OES
Output Enable High to Chip Enable Low
W = V
IL
0
ns
t
WLEL
t
WES
Write Enable Low to Chip Enable Low
G = V
IH
0
ns
t
WLAX
t
AH
Write Enable Low to Address Transition
70
ns
t
ELAX
t
AH
Chip Enable Low to Address Transition
70
ns
t
WLDV
t
DV
Write Enable Low to Input Valid
E = V
IL
, G = V
IH
1
μ
s
t
ELDV
t
DV
Chip Enable Low to Input Valid
G = V
IH
, W = V
IL
1
μ
s
t
ELEH
t
WP
Chip Enable Low to Chip Enable High
100
ns
t
WHEH
t
CEH
Write Enable High to Chip Enable High
0
ns
t
WHGL
t
OEH
Write Enable High to Output Enable
Low
0
ns
t
EHGL
t
OEH
Chip Enable High to Output Enable Low
0
ns
t
EHWH
t
WEH
Chip Enable High to Write Enable High
0
ns
t
WHDX
t
DH
Write Enable High to Input Transition
0
ns
t
EHDX
t
DH
Chip Enable High to Input Transition
0
ns
t
WHWL
t
WPH
Write Enable High to Write Enable Low
100
ns
t
WLWH
t
WP
Write Enable Low to Write Enable High
100
ns
t
WHWH
t
BLC
Byte Load Repeat Cycle Time
0.2
150
μ
s
t
WHRH
t
WC
Write Cycle Time
5
ms
t
EL
, t
WL
E or W Input Filter Pulse Width
Note 1
10
ns
t
DVWH
t
DS
Data Valid before Write Enable High
50
ns
t
DVEH
t
DS
Data Valid before Chip Enable High
50
ns
Note:
1. Characterized only but not testedin production.
Table13. Write Mode AC Characteristics
(T
A
= 0 to 70
°
C or –40 to85
°
C; V
CC
= 2.7V to 3.6V)
11/21
M28256
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M28C256-12NS1T | 256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
| M28C256-12NS6T | 256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
| M28C256-12WBS1T | 256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
| M28C256-12WBS6T | 256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
| M28C256-12WKA1T | 256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M28C256-12NS1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
| M28C256-12NS6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
| M28C256-12WBS1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
| M28C256-12WBS6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
| M28C256-12WKA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
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