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參數(shù)資料
| 型號： | M27W400-120XB6TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 4兆位512KB的x8或256Kb的x16低壓紫外線可擦寫可編程只讀存儲器和OTP存儲器 |
| 文件頁數(shù)： | 1/15頁 |
| 文件大?。?/td> | 140K |
| 代理商： | M27W400-120XB6TR |
1/15
January 2000
M27W400
4 Mbit (512Kb x8 or 256Kb x16)
Low Voltage UV EPROM and OTP EPROM
I
2.7 to 3.6V LOW VOLTAGE in READ
OPERATION
I
READ ACCESS TIME:
– 80ns at V
CC
= 3.0 to 3.6V
– 100ns at V
CC
= 2.7 to 3.6V
I
BYTE-WIDE or WORD-WIDE
CONFIGURABLE
I
4 Mbit MASK ROM REPLACEMENT
I
LOW POWER CONSUMPTION
– Active Current 20mA at 8MHz
– Stand-by Current 15μA
I
PROGRAMMING VOLTAGE: 12.5V ± 0.25V
I
PROGRAMMING TIME: 50μs/word
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: B8h
DESCRIPTION
The M27W400 is a low voltage 4 Mbit EPROM of-
fered in the two range UV (Ultra Violet Erase) and
OTP (one time programmable). It is ideally suited
for microprocessor systems requiring large data or
program storage. It is organised as either 512
Kwords of 8 bit or 256 Kwords of 16 bit. The pin-
out is compatible with the most common 4 Mbit
Mask ROM.
The M27W400 operates in the read mode with a
supply voltage as low as 2.7V at –40 to 85°C tem-
perature range. The decrease in operating power
allows either a reduction of the size of the battery
or an increase in the time between battery re-
charges.
The FDIP40W (window ceramic frit-seal package)
has a transparent lid which allows the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written to the
device by following the programming procedure.
For application where the content is programmed
only one time and erasure is not required, the
M27W400 is offered in PDIP40 and PLCC44 pack-
ages.
1
40
1
40
FDIP40W (F)
PDIP40 (B)
PLCC44 (K)
Figure 1. Logic Diagram
AI03096
18
A0-A17
BYTEVPP
Q0-Q14
VCC
M27W400
G
E
VSS
15
Q15A–1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M27W400-120XF6TR | Spring Contact Probe; Current Rating:5A; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No |
| M27W400 | 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27W400-100B6TR | 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27W400-100F6TR | 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27W400-100K6TR | 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M27W400-120XF6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27W400-120XK6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27W401 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM |
| M27W401_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM |
| M27W401-100B6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM |
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