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參數(shù)資料
| 型號： | M27V160-200M6TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 16兆位的2Mb x8或1兆x16低壓紫外線可擦寫可編程只讀存儲器和OTP存儲器 |
| 文件頁數(shù)： | 1/15頁 |
| 文件大?。?/td> | 103K |
| 代理商： | M27V160-200M6TR |
1/15
March 2000
M27V160
16 Mbit (2Mb x8 or 1Mb x16)
Low Voltage UV EPROM and OTP EPROM
I
3V to 3.6V LOW VOLTAGE in READ
OPERATION
I
ACCESS TIME: 100ns
I
BYTE-WIDE or WORD-WIDE
CONFIGURABLE
I
16 Mbit MASK ROM REPLACEMENT
I
LOW POWER CONSUMPTION
– Active Current 30mA at 8MHz
– Standby Current 60
μ
A
I
PROGRAMMING VOLTAGE: 12.5V
±
0.25V
I
PROGRAMMING TIME: 50
μ
s/word
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: B1h
DESCRIPTION
The M27V160 is a low voltage16 Mbit EPROM of-
fered in the two ranges UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessorsystems requiringlarge data or
program storage. It is organised as either 2 Mbit
words of 8 bit or 1 Mbit words of 16 bit. The pin-out
is compatible with a 16 Mbit Mask ROM.
The M27V160 operates in the read mode with a
supply voltage as low as 3V. The decrease in op-
erating power allows either a reduction of the size
of the battery or an increase in the time between
battery recharges.
The FDIP42W (window ceramic frit-seal package)
has a transparent lid which allows the user to ex-
pose the chipto ultraviolet light to erase the bit pat-
tern. A new pattern can then be written rapidly to
the device by following the programming proce-
dure.
For applications wherethe content is programmed
only one time and erasure is not required, the
M27V160 is offered inPDIP42 and SO44 packag-
es.
44
1
1
42
1
42
FDIP42W (F)
SO44 (M)
PDIP42 (B)
Figure 1. Logic Diagram
AI01898
20
A0-A19
BYTEVPP
Q0-Q14
VCC
M27V160
G
E
VSS
15
Q15A–1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M27V160-100XM1TR | 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-150XM1TR | 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-200XM1TR | 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V201-100XK6TR | 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27V201-120XK6TR | 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M27V160-200XB1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-200XB6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-200XF1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-200XF6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-200XM1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
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