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參數(shù)資料
| 型號(hào)： | M27C64 |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Kilobit (8 K x 8-Bit) CMOS EPROM |
| 中文描述： | 64千比特（8畝× 8位）的CMOS存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大小： | 105K |
| 代理商： | M27C64 |
tAVPL
VALID
AI00779
A0-A12
Q0-Q7
VPP
VCC
P
G
DATA IN
DATA OUT
E
tQVPL
tVPHPL
tVCHPL
tPHQX
tPLPH
tGLQV
tQXGL
tELPL
tGHQZ
tGHAX
PROGRAM
VERIFY
Figure 6. Programming and Verify Modes AC Waveforms
AI01167
n = 1
Last
Addr
VERIFY
P = 1ms Pulse
++n
> 25
++ Addr
VCC = 6V, VPP = 12.5V
FAIL
CHECK ALL BYTES
1st: VCC = 6V
2nd: VCC = 4.2V
YES
NO
YES
NO
YES
NO
P = 3ms Pulse by n
Figure 7. Programming Flowchart
ERASURE OPERATION (applies to UV EPROM)
The erasure characteristics of the M27C64A is
such that erasure begins when the cells are ex-
posed to light with wavelengths shorter than ap-
proximately 4000 . It should be noted that sunlight
and some type of fluorescent lamps have wave-
lengths in the 3000-4000 range. Research
shows that constant exposure to room level fluo-
rescent lighting could erase a typical M27C64A in
about 3 years, while it would take approximately 1
week to cause erasure when exposed to direct
sunlight. If the M27C64A is to be exposed to these
types of lighting conditions for extended periods of
time, it is suggested that opaque labels be put over
the M27C64A window to prevent unintentional era-
sure. The recommended erasure procedure for
the M27C64A is exposure to short wave ultraviolet
light which has a wavelength of 2537 . The inte-
grated dose (i.e. UV intensity x exposure time) for
erasure should be a minimum of 15 W-sec/cm
2
.
The erasure time with this dosage is approximately
15 to 20 minutes using an ultraviolet lamp with
12000
μ
W/cm
2
power rating. The M27C64A should
be placed within 2.5 cm (1 inch) of the lamp tubes
during the erasure. Some lamps have a filter on
their tubes which should be removed before erasure.
8/12
M27C64A
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