參數(shù)資料
型號: M27C322-80F3
廠商: 意法半導體
英文描述: 32 Mbit 2Mb x16 UV EPROM and OTP EPROM
中文描述: 32兆位存儲器的2Mb x16紫外線和OTP存儲器
文件頁數(shù): 5/13頁
文件大?。?/td> 112K
代理商: M27C322-80F3
5/13
M27C322
Table 7. Read Mode DC Characteristics
(1)
(T
A
= 0 to 70 °C, –40 to 85 °C or –40 to 125 °C; V
CC
= 5V ± 10%; V
PP
= V
CC
)
Symbol
Parameter
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Maximum DC voltage on Output is V
CC
+0.5V.
Table 8. Read Mode AC Characteristics
(1)
(T
A
= 0 to 70 °C, –40 to 85 °C or –40 to 125 °C; V
CC
= 5V ± 10%; V
PP
= V
CC
)
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0v
V
IN
V
CC
±1
μA
I
LO
Output Leakage Current
0V
V
OUT
V
CC
±10
μA
I
CC
Supply Current
E = V
IL
, GV
PP
= V
IL
, I
OUT
= 0mA,
f = 8MHz
70
mA
E = V
IL
, GV
PP
= V
IL
, I
OUT
= 0mA,
f = 5MHz
50
mA
I
CC
1
Supply Current (Standby) TTL
E = V
IH
1
mA
I
CC
2
Supply Current (Standby) CMOS
E > V
CC
– 0.2V
100
μA
I
PP
Program Current
V
PP
= V
CC
10
μA
V
IL
Input Low Voltage
–0.3
0.8
V
V
IH
(2)
Input High Voltage
2
V
CC
+ 1
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage TTL
I
OH
= –400μA
2.4
V
Symbol
Alt
Parameter
Test Condition
M27C322
Unit
-80
(3)
-100
Min
Max
Min
Max
t
AVQV
t
ACC
Address Valid to Output Valid
E = V
IL
, GV
PP
= V
IL
80
100
ns
t
ELQV
t
CE
Chip Enable Low to Output Valid
GV
PP
= V
IL
80
100
ns
t
GLQV
t
OE
Output Enable Low to Output Valid
E = V
IL
40
50
ns
t
EHQZ
(2)
t
DF
Chip Enable High to Output Hi-Z
GV
PP
= V
IL
0
40
0
40
ns
t
GHQZ
(2)
t
DF
Output Enable High to Output Hi-Z
E = V
IL
0
40
0
40
ns
t
AXQX
t
OH
Address Transition to Output
Transition
E = V
IL
, GV
PP
= V
IL
5
5
ns
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PDF描述
M27C322-80F6 32 Mbit 2Mb x16 UV EPROM and OTP EPROM
M27C322 32 Mbit 2Mb x16 UV EPROM and OTP EPROM
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