參數(shù)資料
型號: M27C322-100F6
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit 2Mb x16 UV EPROM and OTP EPROM
中文描述: 32兆位存儲器的2Mb x16紫外線和OTP存儲器
文件頁數(shù): 7/13頁
文件大?。?/td> 112K
代理商: M27C322-100F6
7/13
M27C322
Table 10. MARGIN MODE AC Characteristics
(1)
(T
A
= 25 °C; V
CC
= 6.25V ± 0.25V; V
PP
= 12V ± 0.25V)
Symbol
Alt
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Table 11. Programming Mode AC Characteristics
(1)
(T
A
= 25 °C; V
CC
= 6.25V ± 0.25V; V
PP
= 12V ± 0.25V)
Symbol
Alt
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
Parameter
Test Condition
Min
Max
Unit
t
A9HVPH
t
AS9
V
A9
High to V
PP
High
2
μs
t
VPHEL
t
VPS
V
PP
High to Chip Enable Low
2
μs
t
A10HEH
t
AS10
V
A10
High to Chip Enable High (Set)
1
μs
t
A10LEH
t
AS10
V
A10
Low to Chip Enable High (Reset)
1
μs
t
EXA10X
t
AH10
Chip Enable Transition to V
A10
Transition
1
μs
t
EXVPX
t
VPH
Chip Enable Transition to V
PP
Transition
2
μs
t
VPXA9X
t
AH9
V
PP
Transition to V
A9
Transition
2
μs
Parameter
Test Condition
Min
Max
Unit
t
AVEL
t
AS
Address Valid to Chip Enable Low
1
μs
t
QVEL
t
DS
Input Valid to Chip Enable Low
1
μs
t
VCHEL
t
VCS
V
CC
High to Chip Enable Low
2
μs
t
VPHEL
t
OES
V
PP
High to Chip Enable Low
1
μs
t
VPLVPH
t
PRT
V
PP
Rise Time
50
ns
t
ELEH
t
PW
Chip Enable Program Pulse Width (Initial)
45
55
μs
t
EHQX
t
DH
Chip Enable High to Input Transition
2
μs
t
EHVPX
t
OEH
Chip Enable High to V
PP
Transition
2
μs
t
VPLEL
t
VR
V
PP
Low to Chip Enable Low
1
μs
t
ELQV
t
DV
Chip Enable Low to Output Valid
1
μs
t
EHQZ
(2)
t
DFP
Chip Enable High to Output Hi-Z
0
130
ns
t
EHAX
t
AH
Chip Enable High to Address Transition
0
ns
Programming
When delivered (and after each erasure for UV
EPROM), all bits of the M27C322 are in the "1"
state. Data is introduced by selectively program-
ming "0"s into the desired bit locations. Although
only "0"s will be programmed, both "1"s and "0"s
can be present in the data word. The only way to
change a "0" to a "1" is by die exposition to ultravi-
olet light (UV EPROM). The M27C322 is in the
programming mode when V
PP
input is at 12.V,
GV
PP
is at V
IH
and E is pulsed to V
IL
. The data to
be programmed is applied to 16 bits in parallel to
the data output pins. The levels required for the
address and data inputs are TTL. V
CC
is specified
to be 6.25V ± 0.25V.
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