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參數(shù)資料
| 型號(hào)： | M27512-25F6 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | NMOS 512K 64K x 8 UV EPROM |
| 中文描述： | NMOS管為512k 64KX8的紫外線存儲(chǔ)器 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 90K |
| 代理商： | M27512-25F6 |
Symbol
Alt
Parameter
Test Condition
Min
Max
Unit
t
AVEL
t
AS
Address Valid to Chip Enable
Low
Input Valid to Chip Enable Low
V
CC
High to Chip Enable Low
V
PP
High to Chip Enable Low
V
PP
Rise Time
Chip Enable Program Pulse
Width (Initial)
Chip Enable Program Pulse
Width (Overprogram)
Chip Enable High to Input
Transition
Chip Enable High to V
PP
Transition
V
PP
Low to Chip Enable Low
Chip Enable Low to Output
Valid
Chip Enable High to Output Hi-
Z
Chip Enable High to Address
Transition
2
μ
s
t
QVEL
t
VCHEL
t
VPHEL
t
VPLVPH
t
DS
t
VCS
t
OES
t
PRT
2
2
2
μ
s
μ
s
μ
s
ns
50
t
ELEH
t
PW
Note 2
0.95
1.05
ms
t
ELEH
t
OPW
Note 3
2.85
78.75
ms
t
EHQX
t
DH
2
μ
s
t
EHVPX
t
OEH
2
μ
s
t
VPLEL
t
VR
2
μ
s
t
ELQV
t
DV
1
μ
s
t
EHQZ (4)
t
DF
0
130
ns
t
EHAX
t
AH
0
n s
Notes.
1. V
must be applied simultaneously with or before V
and removed simultaneously or after V
PP
.
2. The Initial Program Pulse width tolerance is 1 ms
±
5%.
3. The length of the Over-program Pulse varies from 2.85 ms to 78.95 ms, depending on the multiplication value of the iteration counter.
4. Sampled only, not 100% tested.
Table 10. Programming Mode AC Characteristics
(1)
(T
A
= 25
°
C; V
CC
= 6.25V
±
0.25V; V
PP
= 12.75V
±
0.25V)
Symbol
Alt
Parameter
Test Condition
Min
Max
Unit
t
A9HVPH
t
AS9
VA9 High to V
PP
High
2
μ
s
t
VPHEL
t
VPS
V
PP
High to Chip Enable Low
2
μ
s
t
A10HEH
t
AS10
VA10 High to Chip Enable
High (Set)
1
μ
s
t
A10LEH
t
AS10
VA10 Low to Chip Enable High
(Reset)
1
μ
s
t
EXA10X
t
AH10
Chip Enable Transition to
VA10 Transition
1
μ
s
t
EXVPX
t
VPH
Chip Enable Transition to V
PP
Transition
2
μ
s
t
VPXA9X
t
AH9
V
PP
Transition to VA9
Transition
2
μ
s
Note:
1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Table 9. MARGIN MODE AC Characteristics
(1)
(T
A
= 25
°
C; V
CC
= 6.25V
±
0.25V; V
PP
= 12.75V
±
0.25V)
M27512
6/11
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M27512-25F1 | NMOS 512K 64K x 8 UV EPROM |
| M27512-20F6 | NMOS 512K 64K x 8 UV EPROM |
| M2764A-3F1 | NMOS 64K 8K x 8 UV EPROM |
| M2764A-2F1 | NMOS 64K 8K x 8 UV EPROM |
| M2764A-25 | AVDVANCED 64K (8K x 8) UV ERASABLE PROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M27512-2F1 | 功能描述:可擦除可編程ROM DISC BY STM 07/01 DIP-28 64KX8 200NS RoHS:否 制造商:Maxim Integrated 類型: 存儲(chǔ)容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92 |
| M27512-2F6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NMOS 512K 64K x 8 UV EPROM |
| M275122FI | 制造商:ST MICRO 功能描述:New |
| M27512-30F1 | 功能描述:電可擦除可編程只讀存儲(chǔ)器 DISC BY SGS 11/95 RoHS:否 制造商:STMicroelectronics 存儲(chǔ)容量: 組織: 數(shù)據(jù)保留: 最大時(shí)鐘頻率: 最大工作電流: 工作電源電壓: 最大工作溫度: 安裝風(fēng)格: 封裝 / 箱體: |
| M27512-3F1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NMOS 512K 64K x 8 UV EPROM |
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