參數(shù)資料
型號(hào): M25P64-VMF6TG
廠商: 意法半導(dǎo)體
元件分類(lèi): DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門(mén),串行閃存
文件頁(yè)數(shù): 37/38頁(yè)
文件大?。?/td> 519K
代理商: M25P64-VMF6TG
37/38
M25P64
REVISION HISTORY
Table 18. Document Revision History
Date
Rev.
Description of Revision
28-Apr-2003
0.1
Target Specification Document written in brief form
15-May-2003
0.2
Target Specification Document written in full
20-Jun-2003
0.3
8x6 MLP8 and SO16(300 mil) packages added
18-Jul-2003
0.4
t
PP
, t
SE
and t
BE
revised
02-Sep-2003
0.5
Voltage supply range changed
19-Sep-2003
0.6
Table of contents, warning about exposed paddle on MLP8, and Pb-free options added
17-Dec-2003
0.7
Value of t
VSL
(min) V
WI
, t
PP
(typ) and t
BE
(typ) changed. MLP8 package removed.
15-Nov-2004
1.0
Document status promoted from Target Specification to Preliminary Data. 8x6 MLP8 package
added. Minor wording changes.
24-Feb-2005
2.0
Deep Power-Down mode removed from datasheet (
Figure 19., Read Electronic Signature
(RES) Instruction Sequence and Data-Out Sequence
modified and tRES1 and tRES2
removed from
Table 14., AC Characteristics
). SO16 Wide package specifications updated.
End timing line of t
SHQZ
modified in
Figure 25., Output Timing
. Figures moved below the
corresponding instructions in the
INSTRUCTIONS
section.
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