參數(shù)資料
型號: M25P40-VMN6P
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數(shù): 14/40頁
文件大小: 232K
代理商: M25P40-VMN6P
M25P40
14/40
Write Enable (WREN)
The Write Enable (WREN) instruction (
Figure 8.
)
sets the Write Enable Latch (WEL) bit.
The Write Enable Latch (WEL) bit must be set pri-
or to every Page Program (PP), Sector Erase
(SE), Bulk Erase (BE) and Write Status Register
(WRSR) instruction.
The Write Enable (WREN) instruction is entered
by driving Chip Select (S) Low, sending the in-
struction code, and then driving Chip Select (S)
High.
Figure 8. Write Enable (WREN) Instruction Sequence
Write Disable (WRDI)
The Write Disable (WRDI) instruction (
Figure 9.
)
resets the Write Enable Latch (WEL) bit.
The Write Disable (WRDI) instruction is entered by
driving Chip Select (S) Low, sending the instruc-
tion code, and then driving Chip Select (S) High.
The Write Enable Latch (WEL) bit is reset under
the following conditions:
Power-up
Write Disable (WRDI) instruction completion
Write Status Register (WRSR) instruction
completion
Page Program (PP) instruction completion
Sector Erase (SE) instruction completion
Bulk Erase (BE) instruction completion
Figure 9. Write Disable (WRDI) Instruction Sequence
C
D
AI02281E
S
Q
2
1
3
4
5
6
7
High Impedance
0
Instruction
C
D
AI03750D
S
Q
2
1
3
4
5
6
7
High Impedance
0
Instruction
相關(guān)PDF資料
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M25P40-VMN6TG 4 Mbit Uniform Sector, Serial Flash Memory
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