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參數資料
| 型號： | M24512BN |
| 廠商： | 意法半導體 |
| 英文描述： | 512 Kbit Serial I睠 Bus EEPROM |
| 中文描述： | 512千位串行I眷總線的EEPROM |
| 文件頁數： | 8/24頁 |
| 文件大?。?/td> | 379K |
| 代理商： | M24512BN |
M24512
8/24
Figure 6. Write Mode Sequences with WC=1 (data write inhibited)
Write Operations
Following a Start condition the bus master sends
a Device Select Code with the Read/Write bit
(RW) reset to 0. The device acknowledges this, as
shown in
Figure 7.
, and waits for two address
bytes. The device responds to each address byte
with an acknowledge bit, and then waits for the
data byte.
Writing to the memory may be inhibited if Write
Control (WC) is driven High. Any Write instruction
with Write Control (WC) driven High (during a pe-
riod of time from the Start condition until the end of
the two address bytes) will not modify the memory
contents, and the accompanying data bytes are
notacknowledged, as shown in
Figure 6.
.
Each data byte in the memory has a 16-bit (two
byte wide) address. The Most Significant Byte (
Ta-
ble 4.
) is sent first, followed by the Least Signifi-
cant Byte (
Table 5.
). Bits b15 to b0 form the
address of the byte in memory.
When the bus master generates a Stop condition
immediately after the Ack bit (in the “10
th
bit” time
slot), either at the end of a Byte Write or a Page
Write, the internal Write cycle is triggered. A Stop
condition at any other time slot does not trigger the
internal Write cycle.
After the Stop condition, the delay t
W
, and the suc-
cessful completion of a Write operation, the de-
vice’s internal address counter is incremented
automatically, to point to the next byte address af-
ter the last one that was modified.
During the internal Write cycle, Serial Data (SDA)
is disabled internally, and the device does not re-
spond to any requests.
Byte Write
After the Device Select code and the address
bytes, the bus master sends one data byte. If the
addressed location is Write-protected, by Write
Control (WC) being driven High, the device replies
with NoAck, and the location is not modified. If, in-
stead, the addressed location is not Write-protect-
S
S
BYTE WRITE
DEV SEL
BYTE ADDR
BYTE ADDR
DATA IN
WC
S
PAGE WRITE
DEV SEL
BYTE ADDR
BYTE ADDR
DATA IN 1
WC
DATA IN 2
AI01120C
PAGE WRITE
(cont'd)
WC (cont'd)
S
DATA IN N
ACK
ACK
ACK
NO ACK
R/W
ACK
ACK
ACK
NO ACK
R/W
NO ACK
NO ACK
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相關代理商/技術參數 |
參數描述 |
|---|---|
| M24512-DF_12 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512-Kbit serial I?2C bus EEPROM |
| M24512-DFCS6TP/K | 功能描述:電可擦除可編程只讀存儲器 512Kit I2C EEProm 128kB 1 MHz 1.7 5.5V RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M24512-DFDW6TP | 功能描述:電可擦除可編程只讀存儲器 512Kit I2C EEProm 128kB 1 MHz 1.7 5.5V RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M24512-DFMC6TG | 功能描述:電可擦除可編程只讀存儲器 512Kit I2C EEProm 128kB 1 MHz 1.7 5.5V RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M24512-DFMN6TP | 功能描述:電可擦除可編程只讀存儲器 512Kit I2C EEProm 128kB 1 MHz 1.7 5.5V RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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