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參數(shù)資料
| 型號： | M1MA174 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Silicon Switching Diode |
| 中文描述： | 硅開關(guān)二極管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 56K |
| 代理商： | M1MA174 |
Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 1
1
Publication Order Number:
M1MA174T1/D
M1MA174T1
Preferred Device
Silicon Switching Diode
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
IF
100
V
Recurrent Peak Forward Current
200
mA
Peak Forward Surge Current
Pulse Width = 10
μ
s
IFM(surge)
500
mA
Total Power Dissipation,
One Diode Loaded
TA = 25
°
C
Derate above 25
°
C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
PD
200
1.6
mW
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to
+150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction to Ambient
One Diode Loaded
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
R
θ
JA
0.625
°
C/mW
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Reverse Breakdown Voltage
(IR = 100
μ
Adc)
V(BR)
100
–
Vdc
Reverse Voltage Leakage Current
(VR = 20 Vdc)
(VR = 75 Vdc)
IR
–
–
25
5.0
nAdc
μ
Adc
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CT
–
4.0
pF
Forward Voltage
(IF = 10 mAdc)
VF
–
1.0
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
trr
–
4.0
ns
Device
Package
Shipping
ORDERING INFORMATION
SC–70/SOT–323
CASE 419
STYLE 2
http://onsemi.com
M1MA174T1
SC–70
3000/Tape & Reel
MARKING DIAGRAM
J6 M
J6
M
= Device Code
= Date Code
Preferred
devices are recommended choices for future use
and best overall value.
3
CATHODE
1
ANODE
2
1
3
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