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參數(shù)資料
| 型號(hào)： | M1MA151WAT3 |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.1 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | SC-59, 3 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 106K |
| 代理商： | M1MA151WAT3 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Common Anode Silicon
Dual Switching Diodes
These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in
ultra high speed switching applications. These devices are housed in the SC–59
package which is designed for low power surface mount applications.
Fast trr, < 10 ns
Low CD, < 15 pF
Available in 8 mm Tape and Reel
Use M1MA151/2WAT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2WAT3 to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Reverse Voltage
M1MA151WAT1
VR
40
Vdc
M1MA152WAT1
80
Peak Reverse Voltage
M1MA151WAT1
VRM
40
Vdc
M1MA152WAT1
80
Forward Current
Single
IF
100
mAdc
Dual
150
Peak Forward Current
Single
IFM
225
mAdc
Dual
340
Peak Forward Surge Current
Single
IFSM(1)
500
mAdc
Dual
FSM
750
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
– 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Condition
Min
Max
Unit
Reverse Voltage Leakage Current
M1MA151WAT1
IR
VR = 35 V
—
0.1
Adc
M1MA152WAT1
VR = 75 V
—
0.1
Forward Voltage
VF
IF = 100 mA
—
1.2
Vdc
Reverse Breakdown Voltage
M1MA151WAT1
VR
IR = 100 A
40
—
Vdc
M1MA152WAT1
80
—
Diode Capacitance
CD
VR = 0, f = 1.0 MHz
—
15
pF
Reverse Recovery Time
trr(2)
IF = 10 mA, VR = 6.0 V,
RL = 100 , Irr = 0.1 IR
—
10
ns
1. t = 1 SEC
2. trr Test Circuit
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by M1MA151WAT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
M1MA151WAT1
M1MA152WAT1
SC–59 PACKAGE
COMMON ANODE
DUAL SWITCHING DIODES
40/80 V–100 mA
SURFACE MOUNT
Motorola Preferred Devices
CASE 318D–03, STYLE 5
SC–59
2
1
3
Motorola, Inc. 1996
ANODE
3
21
CATHODE
REV 3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M1MA152/2AT3 | 0.1 A, 80 V, SILICON, SIGNAL DIODE |
| M1MA152/2AT1 | 0.1 A, 40 V, SILICON, SIGNAL DIODE |
| M1MA152AT3 | 0.1 A, 80 V, SILICON, SIGNAL DIODE |
| M2-TP | SILICON, SIGNAL DIODE, DO-214AC |
| M2035S-E3/4W | 20 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M1MA151WK | 制造商:SECOS 制造商全稱(chēng):SeCoS Halbleitertechnologie GmbH 功能描述:Surface Mount Switching Diode |
| M1MA151WKLT1 | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:Common Anode Silicon Dual Switching diodes |
| M1MA151WKLT1G | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:Common Anode Silicon Dual Switching diodes |
| M1MA151WKT1 | 功能描述:二極管 - 通用，功率，開(kāi)關(guān) 40V 100mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| M1MA151WKT1_12 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Common Cathode Silicon Dual Switching Diodes |
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