參數(shù)資料
型號(hào): M12L64322A-7T
廠商: Electronic Theatre Controls, Inc.
英文描述: 512K x 32 Bit x 4 Banks Synchronous DRAM
中文描述: 為512k × 32位× 4個(gè)銀行同步DRAM
文件頁數(shù): 20/44頁
文件大?。?/td> 813K
代理商: M12L64322A-7T
ESMT
M12L64322A
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2004
Revision
:
1.7
20/44
*Note : 1. To prevent bus contention, there should be at least one gap between data in and data out.
5. Write Interrupted by Precharge & DQM
*Note : 1. To prevent bus contention, DQM should be issued which makes at least one gap between data in and data out.
2. To inhibit invalid write, DQM should be issued.
3. This precharge command and burst write command should be of the same bank, otherwise it is not precharge interrupt
but only another bank precharge of four banks operation.
CLK
i ) C M D
i i ) C M D
i i i ) C M D
i v) C M D
DQ M
DQ M
DQ M
DQ M
DQ
DQ
DQ
DQ
D1
D3
D1
D0
D2
D3
D0
D2
W R
(b) CL=3,BL= 4
R D
W R
R D
W R
D1
D3
D0
D2
D1
D3
D0
D2
R D
W R
H i - Z
D1
D3
D0
D2
Q0
*Not e 1
v) C M D
DQ M
DQ
R D
W R
H i - Z
R D
CLK
C M D
DQ M
DQ
D0
D1
D2
W R
* Not e 3
*Not e 2
Ma s k e d b y D Q M
D3
1) N o r m a l W r i t e ( B L = 4 )
t
RDL(min)
PRE
相關(guān)PDF資料
PDF描述
M12S16161A 512K x 16Bit x 2Banks Synchronous DRAM
M12S16161A-10T 512K x 16Bit x 2Banks Synchronous DRAM
M12S16161A-10TG 512K x 16Bit x 2Banks Synchronous DRAM
M12S16161A-15T 512K x 16Bit x 2Banks Synchronous DRAM
M12S16161A-15TG 512K x 16Bit x 2Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12L64322A-7TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-7TG2U 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks
M-12-LID-PLATED 功能描述:罩類、盒類及殼類產(chǎn)品 PLTD LID FOR M12 RoHS:否 制造商:Bud Industries 產(chǎn)品:Boxes 外部深度:6.35 mm 外部寬度:6.35 mm 外部高度:2.56 mm NEMA 額定值: IP 等級(jí): 材料:Acrylonitrile Butadiene Styrene (ABS) 顏色:Red
M12M1 制造商:TE Connectivity 功能描述:
M12M124D-0.5 制造商:L COM 功能描述:CA M12 TO M12 4 POS D .5M