參數(shù)資料
型號: LXE15450X
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN microwave power transistor
中文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
文件頁數(shù): 3/12頁
文件大?。?/td> 90K
代理商: LXE15450X
1997 Feb 18
3
Philips Semiconductors
Product specification
NPN microwave power transistor
LXE15450X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Up to 0.2 mm from ceramic.
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
MAX.
UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
i
P
tot
T
stg
T
j
T
sld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
input power
total power dissipation
storage temperature
junction temperature
soldering temperature
open emitter
R
BE
= 220
open base
open collector
45
30
25
3
9
12
70
+200
200
235
V
V
V
V
A
W
W
°
C
°
C
°
C
f = 1.5 GHz; V
CE
= 24 V; class AB
T
mb
= 75
°
C
t
10 s; note 1
handbook, halfpage
10
2
MLC436
10
1
1
10
1
VCE
IC
(A)
I
Fig.2 DC SOAR.
T
mb
75
°
C.
(I) Region of permissible DC operation.
handbook, halfpage
Ptot
(W)
0
50
100
200
20
0
MLC437
150
Tmb
o
40
60
Fig.3 Power derating curve.
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