參數(shù)資料
型號(hào)： LX5512E-LQ
廠商： MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP
元件分類： 衰減器
英文描述： InGaP HBT 2.4 - 2.5 GHz Power Amplifier
中文描述： 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
封裝： 3 X 3 MM, LEAD-FREE, PLASTIC, MLPQ-16
文件頁(yè)數(shù)： 1/10頁(yè)
文件大小： 230K
代理商： LX5512E-LQ
LX5512E
P
RODUCTION
D
ATA
S
HEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
Copyright
2000
Rev. 1.2, 2004-01-16
W
M
.
C
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
TM
DESCRIPTION
The LX5512E is a power amplifier
optimized for WLAN applications in
the 2.4-2.5 GHz frequency range. The
PA is implemented as a three-stage
monolithic
microwave
circuit (MMIC) with active bias and
input/output pre-matching. The device
is manufactured with an InGaP/GaAs
Heterojunction
Bipolar
(HBT) IC process (MOCVD). It
operates at a single low voltage supply
of 3.3V with 34 dB power gain
between 2.4-2.5GHz, at a low
quiescent
current
integrated
Transistor
of
50
mA.
For 19dBm OFDM output power
(64QAM, 54Mbps), the PA provides a
low EVM (Error-Vector Magnitude) of
3 %, and consumes 130 mA total DC
current.
The LX5512E is available in a 16-pin
3mmx3mm micro-lead package (MLP).
The compact footprint, low profile, and
excellent thermal capability of the MLP
package makes the LX5512E an ideal
solution for high-gain power amplifier
requirements
for
applications
.
IEEE
802.11b/g
IMPORTANT:
For the most current data, consult
MICROSEMI
’s website:
http://www.microsemi.com
KEY FEATURES
Advanced InGaP HBT
2.4 – 2.5GHz Operation
Single-Polarity 3.3V Supply
Low Quiescent Current Icq
~50mA
Power Gain ~34dB @ 2.45GHz
and Pout = 19dBm
Total Current 130mA for Pout =
19dBm @ 2.45GHz OFDM
EVM ~ 3.0% for 64QAM /
54Mbps and Pout = 19dBm
Small Footprint (3 x 3 mm
)
Low Profile (0.9mm)
APPLICATIONS
IEEE 802.11b/g
PRODUCT HIGHLIGHT
PACKAGE ORDER INFO
Plastic MLPQ
16 pin
LX5512E-LQ
Note: Available in Tape & Reel.
Append the letter “T” to the part number.
(i.e. LX5512E-LQT)
LQ
L
X
5
5
1
2
E
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