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參數(shù)資料
| 型號： | LVX8051 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Analog Multiplexer / Demultiplexer High−Performance Silicon−Gate CMOS |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 173K |
| 代理商： | LVX8051 |
MC74LVX8051
http://onsemi.com
5
AC CHARACTERISTICS
(C
L
= 50 pF, Input t
r
= t
f
= 3 ns)
V
CC
V
Guaranteed Limit
Symbol
Parameter
55 to 25
°
C
≤
85
°
C
≤
125
°
C
Unit
t
PLH
,
t
PHL
Maximum Propagation Delay, ChannelSelect to Analog Output
(Figure 9)
2.5
3.0
4.5
5.5
30
20
15
15
35
25
18
18
40
30
22
20
ns
t
PLH
,
t
PHL
Maximum Propagation Delay, Analog Input to Analog Output
(Figure 10)
2.5
3.0
4.5
5.5
4.0
3.0
1.0
1.0
6.0
5.0
2.0
2.0
8.0
6.0
2.0
2.0
ns
t
PLZ
,
t
PHZ
Maximum Propagation Delay, Enable to Analog Output
(Figure 11)
2.5
3.0
4.5
5.5
30
20
15
15
35
25
18
18
40
30
22
20
ns
t
PZL
,
t
PZH
Maximum Propagation Delay, Enable to Analog Output
(Figure 11)
2.5
3.0
4.5
5.5
20
12
8.0
8.0
25
14
10
10
30
15
12
12
ns
C
in
Maximum Input Capacitance, ChannelSelect or Enable Inputs
10
10
10
pF
C
I/O
Maximum Capacitance
Analog I/O
35
35
35
pF
(All Switches Off)
Common O/I
130
130
130
Feedthrough
1.0
1.0
1.0
Typical @ 25
°
C, V
CC
= 5.0 V
45
C
PD
Power Dissipation Capacitance (Figure 13)*
pF
* Used to determine the noload dynamic power consumption: P
D
= C
PD
V
CC2
f + I
CC
V
CC
.
ADDITIONAL APPLICATION CHARACTERISTICS
(GND = 0 V)
V
CC
V
Limit*
Symbol
Parameter
Condition
25
°
C
Unit
BW
Maximum OnChannel Bandwidth or
Mi i
Minimum Frequency Response
(Figure 6)
f
in
= 1MHz Sine Wave; Adjust f
in
Voltage to Obtain
0dBm at V
OS
; Increase f
in
Frequency U til dB
Meter Reads 3dB;
R
L
= 50 , C
L
= 10pF
MHz
3.0
4.5
5.5
80
80
80
—
OffChannel Feedthrough Isolation
(Figure 7)
f
in
= Sine Wave; Adjust f
in
Voltage to Obtain 0dBm
at V
IS
f
in
= 10kHz, R
L
= 600 , C
L
= 50pF
3.0
4.5
5.5
50
50
50
dB
f
in
= 1.0MHz, R
L
= 50 , C
L
= 10pF
3.0
4.5
5.5
37
37
37
—
Feedthrough Noise. ChannelSelect
Input to Common I/O (Figure 8)
V
in
≤
1MHz Square Wave (t
r
= t
f
= 6ns); Adjust R
L
at Setup so that I
S
= 0A;
Enable = GND
R
L
= 600 , C
L
= 50pF
3.0
4.5
5.5
25
105
135
mV
PP
R
L
= 10k , C
L
= 10pF
3.0
4.5
5.5
35
145
190
THD
Total Harmonic Distortion
(Figure 14)
f
in
= 1kHz, R
L
= 10k , C
L
= 50pF
THD = THD
measured
THD
source
V
IS
= 2.0V
PP
sine wave
V
IS
= 4.0V
PP
sine wave
V
IS
= 5.0V
PP
sine wave
3.0
4.5
5.5
0.10
0.08
0.05
%
*Limits not tested. Determined by design and verified by qualification.
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