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參數(shù)資料
| 型號(hào)： | LTE42008R |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN microwave power transistor |
| 中文描述： | C BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 78K |
| 代理商： | LTE42008R |
1997 Feb 24
7
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE42008R
Fig.5 Load power as a function of input power.
f = 4.2 GHz; T
mb
= 25
°
C.
V
CE
= 16 V; I
C
= 250 mA (regulated).
(1) G
po
= 7.5 dB.
handbook, halfpage
0
0.8
0.4
0
100
200
300
MGL011
PL
(W)
Pi (mW)
(1)
PL1
typ
Fig.6
Load power and power gain associated with
1 dB compressed power gain as a function
of frequency.
handbook, halfpage
0
5
5
10
15
1
0
1
2
3
4
MGL017
PL1
(W)
Gpo
(dB)
f (GHz)
PL1
Gpo
Fig.7
Load power associated with 1 dB
compressed power gain as a function of
collector current; typical values.
T
mb
= 25
°
C; V
CE
and I
C
regulated.
handbook, halfpage
PL1
(mW)
150
200
250
350
IC (mA)
1100
700
500
900
300
MBH905
VCE = 18 V
16 V
14 V
Fig.8
Low level power gain associated with P
L1
as
a function of collector current; typical
values.
T
mb
= 25
°
C; V
CE
and I
C
regulated.
handbook, halfpage
100
Gpo
(dB)
200
400
IC (mA)
6.5
6.9
7.3
300
MBH906
VCE = 18 V
16 V
14 V
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| LTE42012R | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN microwave power transistor |
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| LTE4206C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
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