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參數(shù)資料
| 型號： | LTE21009R |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN microwave power transistor |
| 中文描述： | C BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC, SOT-440A, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 55K |
| 代理商： | LTE21009R |
1997 Feb 19
3
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE21009R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
DC collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
open emitter
R
BE
= 100
open base
open collector
65
40
35
16
3
250
4
+200
200
235
V
V
V
V
mA
W
°
C
°
C
°
C
T
mb
≤
75
°
C
up to 0.3 mm from case;
t
≤
10 s
T
mb
= 75
°
C.
(1) Region of permissible DC operation.
(2) Permissible extension provided R
BE
< 100
.
(3) Second breakdown limit (independent of temperature).
Fig.2 DC SOAR.
handbook, halfpage
IC
(mA)
3
10
2
10
1
MBH902
10
VCE (V)
15
20
25
30
35
(3)
(1)
(2)
V
Fig.3
Power dissipation derating as a function of
mounting-base temperature.
handbook, halfpage
(W)
50
200
0
1
2
3
4
0
50
100
150
MGD966
Tmb (
°
C)
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