參數(shù)資料
型號(hào): LTE-3271TL
廠商: LITE-ON ELECTRONICS INC
元件分類: 紅外LED
英文描述: GaAlAs T-1 3/4 Standard 5 Infrared Emitting Diode
中文描述: 5 mm, 1 ELEMENT, INFRARED LED, 940 nm
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 271K
代理商: LTE-3271TL
10-14
Package Dimensions
LTE-3271T/LTE-3371T/LTE-3271TL/LTE-3371TL
Features
Special for high current and low forward voltage.
High power.
Available for pulse operating.
Wide viewing angle.
LTE-3271TL/LTE-3371TL are blue transparent color
package.
Description
The LTE-3271T/LTE-3371T/LTE-3217TL/LTE-3371TL are
high intensity Gallium Aluminum Arsenide infrared emit-
ting diodes mounted in plastic end looking packages.
They provide a broad range of intensity selection and
are specified under pulsed drive up to 2 Amps.
Parameter
Power Dissipation
Peak Forward Current(300pps, 10
Continuous Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
[1.6mm (.063 in.) from body]
s pulse)
260
for 5 Seconds
150
2
100
5
mW
A
mA
V
-40
-55
to +85
to +100
Absolute Maximum Ratings at Ta=25
Maximum Rating
Unit
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is
0.25mm (.010") unless otherwise noted.
3. Protruded resin under flange is 1.5mm (.059") max.
4. Lead spacing is measured where the leads emerge from
the package.
5. Specifications are subject to change without notice.
相關(guān)PDF資料
PDF描述
LTE-4206 SELECTED TO SPECIFIC ON-LINE INTENSITY AND RADIANT INTENSITY RANGES
LTE-5208A MECHANICALLY AND SPECTRALLY MATCHED TO THE LTR - 3208 SERIES IF PHOTOTRANSISTOR
LTE-5228A SPECIAL FOR HIGH CURENT AND LOW FORWARD VOLTAGE
LTE21009 NPN microwave power transistor
LTE21009R NPN microwave power transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LTE-3276 制造商:Lite-On Semiconductor Corporation 功能描述:EMITTER IRED 5MM 940 TRANS
LTE-3277 制造商:LITEON 制造商全稱:Lite-On Technology Corporation 功能描述:Property of LITE-ON Only
LTE-3277T 制造商:LITEON 制造商全稱:Lite-On Technology Corporation 功能描述:Property of LITE-ON Only
LTE-3279K 功能描述:紅外發(fā)射源 Infrared 940nm RoHS:否 制造商:Fairchild Semiconductor 波長(zhǎng):880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk
LTE-329P4-M 制造商:LITEON 制造商全稱:Lite-On Technology Corporation 功能描述:Property of Lite-On Only