VOH High Level Output Voltage (Note 5) V+
參數資料
型號: LTC6907CS6#TRMPBF
廠商: Linear Technology
文件頁數: 6/12頁
文件大?。?/td> 0K
描述: IC OSC SILICON 4MHZ TSOT23-6
產品目錄繪圖: LTC690(6,7)CS6#TRMPBF Top
標準包裝: 1
類型: 振蕩器 - 硅
頻率: 40kHz ~ 4MHz
電源電壓: 3 V ~ 3.6 V
電流 - 電源: 305µA
工作溫度: -40°C ~ 85°C
封裝/外殼: SOT-23-6 細型,TSOT-23-6
包裝: 標準包裝
供應商設備封裝: TSOT-23-6
安裝類型: 表面貼裝
產品目錄頁面: 1715 (CN2011-ZH PDF)
其它名稱: LTC6907CS6#TRMPBFDKR
LTC6907
3
6907fa
VOH
High Level Output Voltage (Note 5)
V+ = 3.6V
IOH = – 100A
3.40
3.57
V
IOH = – 1mA
3.10
3.45
V
V+ = 3V
IOH = – 100A
2.8
2.97
V
IOH = – 1mA
2.5
2.80
V
VOL
Low Level Output Voltage (Note 5)
V+ = 3.6V
IOL = 100A
0.08
0.2
V
IOL = 1mA
0.25
0.8
V
V+ = 3V
IOL = 100A
0.07
0.2
V
IOL = 1mA
0.25
0.8
V
tr
OUT Rise Time (Note 6)
V+ = 3.6V
10
ns
V+ = 3V
25
ns
tf
OUT Fall Time (Note 6)
V+ = 3.6V
10
ns
V+ = 3V
25
ns
VGS
GRD Pin Voltage Relative to SET Pin
–10
A ≤ IGRD ≤ 0.3A
–10
10
mV
Voltage
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
The
denotes the specifications which apply over the full specified
temperature range, otherwise specifications are at TA = 25°C. V+ = 3V to 3.6V, CL = 5pF, Pin 3 = V+ unless otherwise noted.
All voltages are with respect to GND.
ELECTRICAL CHARACTERISTICS
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Some frequencies may be generated using two different values of
RSET. For these frequencies, the error is specified assuming that the larger
value of RSET is used.
Note 3: Frequency accuracy is defined as the deviation from the fOUT
equation.
Note 4: Jitter is the ratio of the peak-to-peak deviation of the period to the
mean of the period. This specification is based on characterization and is
not 100% tested.
Note 5: Current into a pin is given as a positive value. Current out of a pin
is given as a negative value.
Note 6: Output rise and fall times are measured between the 10% and
90% power supply levels.
Note 7: The LTC6907C is guaranteed to meet specified performance from
0
°C to 70°C. The LTC6907C is designed, characterized and expected to
meet specified performance from –40
°C to 85°C but is not tested or QA
sampled at these temperatures. The LTC6907I is guaranteed to meet
specified performance from –40
°C to 85°C.
Note 8: Consult the Applications Information section for operation with
supplies higher than 3.6V.
Note 9: Long term drift on silicon oscillators is primarily due to the
movement of ions and impurities within the silicon and is tested at 30
°C
under otherwise nominal operating conditions. Long term drift is specified
as ppm/
√kHr due to the typically non-linear nature of the drift. To calculate
drift for a set time period, translate that time into thousands of hours, take
the square root and multiply by the typical drift number. For instance, a
year is 8.77kHr and would yield a drift of 888ppm at 300ppm/
√kHr. Ten
years is 87.7kHr and would yield a drift of 2,809 ppm at 300 ppm/
√kHr.
Drift without power applied to the device may be approximated as 1/10th of
the drift with power, or 30ppm/
√kHr for a 300ppm/√kHr device.
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