參數(shù)資料
型號: LTC4365HDDB#TRMPBF
廠商: LINEAR TECHNOLOGY CORP
元件分類: 電源管理
英文描述: 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8
封裝: 3 X 2 MM, LEAD FREE, PLASTIC, M0-229WECD-1, DFN-8
文件頁數(shù): 5/16頁
文件大小: 369K
代理商: LTC4365HDDB#TRMPBF
LTC4365
13
4365f
Select Between Two Input Supplies
With the part in shutdown, the VIN and VOUT pins can be
driven by separate power supplies. The LTC4365 then
automatically drives the GATE pin just below the lower of
the two supplies, thus turning off the external back-to-back
MOSFETs. The application of Figure 11 uses two LTC4365s
to select between two power supplies. Care should be taken
to ensure that only one of the two LTC4365s is enabled
at any given time.
APPLICATIONS INFORMATION
Figure 11. Selecting One of Two Supplies
VIN
V2
SHDN
4365 F11
VOUT
GATE
LTC4365
VIN
V1
SEL
0
1
OUT
V1
V2
OUT
M2
M1
M2
M1
SEL
SHDN
VOUT
GATE
LTC4365
Limiting Inrush Current During Turn-On
The LTC4365 turns on the external N-channel MOSFET
with a 20μA current source. The maximum slew rate at
the GATE pin can be reduced by adding a capacitor on
the GATE pin:
Slew Rate
=
20A
CGATE
Since the MOSFET acts like a source follower, the slew
rate at VOUT equals the slew rate at GATE.
Therefore, inrush current is given by:
I
INRUSH =
COUT
CGATE
20A
For example, a 1A inrush current to a 330μF output
capacitance requires a GATE capacitance of:
CGATE =
20A COUT
IINRUSH
CGATE =
20A 330F
1A
= 6.6nF
The 6.8nF CGATE capacitor in the application circuit of
Figure 13 limits the inrush current to approximately 1A.
RGATE makes sure that CGATE does not affect the fast GATE
turn off characteristics during UV/OV faults, or during
reverse VIN connection. R4A and R4B help prevent high
frequency oscillations with the external N-channel MOSFET
and related board parasitics.
VIN
UV
OV
SHDN
OV = 30V
4365 F12
VOUT
FAULT
GATE
VIN
24V
SI7120DN
60V
VOUT
GND
LTC4365
R2
2370k
R1
40.2k
COUT
100μF
+
Figure 12. Small Footprint Single MOSFET Application
Protects Against 60V
Single MOSFET Application
When reverse VIN protection is not needed, only a single
external N-channel MOSFET is necessary. The applica-
tion circuit of Figure 12 connects the load to VIN when
VIN is less than 30V, and uses the minimal set of external
components.
4365 F13
VIN
VOUT
R4B
10Ω
R4A
10Ω
COUT
330μF
VOUT
GATE
LTC4365
RGATE
5.1k
CGATE
6.8nF
+
M2
M1
Figure 13. Limiting Inrush Current with CGATE
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