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參數(shù)資料
| 型號： | LTC4070EDDB#TRPBF |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | 電源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8 |
| 封裝： | 3 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, MO-229WECD-1, DFN-8 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 214K |
| 代理商： | LTC4070EDDB#TRPBF |
LTC4070
3
4070fc
elecTrical characTerisTics
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC4070 is tested under pulsed load conditions such that
TJ ≈ TA. The LTC4070E is guaranteed to meet performance specifications
for junction temperatures from 0°C to 85°C. Specifications over the
–40°C to 125°C operating junction temperature range are assured by
design, characterization and correlation with statistical process controls.
The l denotes the specifications which apply over the full operating
junction temperature range. VNTC = VCC, TA = 25°C unless otherwise specified. Current into a pin is positive and current out of a pin is
negative. All voltages are referenced to GND unless otherwise noted. (Note 2)
The LTC4070I is guaranteed over the full –40°C to 125°C operating
junction temperature range. Note that the maximum ambient temperature
consistent with these specifications is determined by specific operating
conditions in conjunction with board layout, the rated package thermal
resistance and other environmental factors.
Note 3: The IDRV(SNK) current is tested by pulling the DRV pin up to VCC
through a 475k resistor, RDRV. Pulling the DRV pin up to VCC with low
impedance disables the regulator.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
High Battery Status
VHBTH
HBO Threshold (VFLOAT – VCC)
VCC Rising
l
15
40
60
mV
VHBHY
Hysteresis
100
mV
Low Battery Status
VLBTH
LBO Threshold
VCC Falling
l
3.08
3.2
3.34
V
VLBHY
Hysteresis
220
290
350
mV
Status Outputs HBO/LBO
VOL
CMOS Output Low
ISINK = 1mA, VCC = 3.7V
l
0.5
V
VOH
CMOS Output High
VLBO: VCC = 3.1V, ISOURCE = –100A
VHBO: ICC = 1.5mA, ISOURCE = –500A
l
VCC – 0.6
V
3-State Selection Input: ADJ
VADJ
ADJ Input Level
Input Logic Low Level
l
0.3
V
Input Logic High Level
l
VCC – 0.3
V
IADJ(Z)
Allowable ADJ Leakage Current in
Floating State
l
±3
A
NTC
INTC
NTC Leakage Current
0V< NTC < VCC
–50
0
50
nA
INTCBIAS
Average NTCBIAS Sink Current
Pulsed Duty Cycle < 0.002%
30
pA
VFLOAT(NTC)
Delta Float Voltage per NTC Comparator
Step
ICC = 1mA, NTC Falling Below One of the
NTCTH Thresholds
ADJ = 0V
ADJ = Float
ADJ = VCC
–50
–75
–100
mV
NTCTH1
NTC Comparator Falling Thresholds
VNTC as % of VNTCBIAS Amplitude
35.5
36.5
37.5
%
NTCTH2
28.0
29.0
30.0
%
NTCTH3
21.8
22.8
23.8
%
NTCTH4
16.8
17.8
18.8
%
NTCHY
Hysteresis
30
mV
Drive Output
IDRV(SOURCE)
DRV Output Source Current
VCC = 3.1V, VDRV = 0V
–1
mA
IDRV(SINK)
DRV Output Sink Current
ICC = 1mA, RDRV = 475k (Note 3)
3
A
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