參數資料
型號: LTC3586EUFE-1#TRPBF
廠商: LINEAR TECHNOLOGY CORP
元件分類: 穩(wěn)壓器
英文描述: BATTERY CHARGE CONTROLLER, PQCC38
封裝: 4 X 6 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, QFN-38
文件頁數: 7/36頁
文件大小: 317K
代理商: LTC3586EUFE-1#TRPBF
LTC3586/LTC3586-1
15
3586fa
OPERATION
The current at CLPROG is a fraction (hCLPROG–1) of the
VBUS current. When a programming resistor and an av-
eraging capacitor are connected from CLPROG to GND,
the voltage on CLPROG represents the average input
current of the PowerPath switching regulator. When the
input current approaches the programmed limit, CLPROG
reaches VCLPROG, 1.188V and power out is held constant.
The input current limit is programmed by the ILIM0 and
ILIM1 pins to limit average input current to one of several
possible settings as well as be deactivated (USB Suspend).
The input current limit will be set by the VCLPROG servo
voltage and the resistor on CLPROG according to the fol-
lowing expression:
II
V
R
h
VBUS
VBUSQ
CLPROG
=+
+
()
1
Figure 1 shows the range of possible voltages at VOUT as
a function of battery voltage.
Ideal Diode from BAT to VOUT
The LTC3586/LTC3586-1 have an internal ideal diode as
well as a controller for an optional external ideal diode.
The ideal diode controller is always on and will respond
quickly whenever VOUT drops below BAT.
BAT (V)
2.4
4.5
4.2
3.9
3.6
3.3
3.0
2.7
2.4
3.3
3.9
3586 F01
2.7
3.0
3.6
4.2
V
OUT
(V)
NO LOAD
300mV
Figure 1. VOUT vs BAT
If the load current increases beyond the power allowed
from the switching regulator, additional power will be
pulled from the battery via the ideal diode. Furthermore,
if power to VBUS (USB or wall power) is removed, then
all of the application power will be provided by the bat-
tery via the ideal diode. The transition from input power
to battery power at VOUT will be quick enough to allow
only the10μF capacitor to keep VOUT from drooping. The
ideal diode consists of a precision amplier that enables
a large on-chip P-channel MOSFET transistor whenever
the voltage at VOUT is approximately 15mV (VFWD) below
the voltage at BAT. The resistance of the internal ideal
diode is approximately 180mΩ. If this is sufcient for the
application, then no external components are necessary.
However, if more conductance is needed, an external
P-channel MOSFET transistor can be added from BAT to
VOUT. See Figure 2.
When an external P-channel MOSFET transistor is present,
the GATE pin of the LTC3586/LTC3586-1 drive its gate for
automatic ideal diode control. The source of the external
P-channel MOSFET should be connected to VOUT and the
drain should be connected to BAT. Capable of driving a
1nF load, the GATE pin can control an external P-channel
MOSFET transistor having an on-resistance of 40mΩ or
lower.
FORWARD VOLTAGE (mV) (BAT – VOUT)
0
CURRENT
(mA)
600
1800
2000
2200
120
240 300
3586 F02
200
1400
1000
400
1600
0
1200
800
60
180
360
480
420
VISHAY Si2333
OPTIONAL EXTERNAL
IDEAL DIODE
LTC3586/
LTC3586-1
IDEAL DIODE
ON
SEMICONDUCTOR
MBRM120LT3
Figure 2. Ideal Diode Operation
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