參數(shù)資料
型號: LT3470HDDB#TR
廠商: LINEAR TECHNOLOGY CORP
元件分類: 穩(wěn)壓器
英文描述: 0.2 A SWITCHING REGULATOR, PDSO8
封裝: 3 X 2 MM, 0.75MM INCH HEIGHT, MO-229WECD-1, PLASTIC, DFN-8
文件頁數(shù): 5/16頁
文件大?。?/td> 244K
代理商: LT3470HDDB#TR
13
LT3470
3470fb
Figure 6: A Well Chosen Input Network Prevents Input Voltage Overshoot and
Ensures Reliable Operation When the LT3470 is Connected to a Live Supply
+
LT3470
2.2
F
VIN
10V/DIV
IIN
10A/DIV
10
s/DIV
VIN
CLOSING SWITCH
SIMULATES HOT PLUG
IIN
(6a)
(6b)
(6c)
LOW
IMPEDANCE
ENERGIZED
24V SUPPLY
STRAY
INDUCTANCE
DUE TO 6 FEET
(2 METERS) OF
TWISTED PAIR
+
LT3470
2.2
F
10
F
35V
AI.EI.
LT3470
2.2
F
0.1
F
1
3470 F06
the circuit, though it is likely to be the largest component
in the circuit. An alternative solution is shown in Figure 6c.
A 1
resistor is added in series with the input to eliminate
the voltage overshoot (it also reduces the peak input
current). A 0.1
Fcapacitorimproveshighfrequencyfilter-
ing. This solution is smaller and less expensive than the
electrolytic capacitor. For high input voltages its impact on
efficiency is minor, reducing efficiency less than one half
percent for a 5V output at full load operating from 24V.
High Temperature Considerations
The die junction temperature of the LT3470 must be lower
than the maximum rating of 125
°C(150°CfortheHgrade).
This is generally not a concern unless the ambient tem-
perature is above 85
°C. For higher temperatures, care
should be taken in the layout of the circuit to ensure good
heat sinking of the LT3470. The maximum load current
should be derated as the ambient temperature approaches
the maximum junction rating. The die temperature is
calculated by multiplying the LT3470 power dissipation
by the thermal resistance from junction to ambient.
Power dissipation within the LT3470 can be estimated by
calculating the total power loss from an efficiency mea-
surement. Thermal resistance depends on the layout of
the circuit board and choice of package. The DD package
with the exposed pad has a thermal resistance of approxi-
mately 80
°C/W while the ThinSOT is approximately
150
°C/W. Finally, be aware that at high ambient tempera-
tures the internal Schottky diode will have significant
leakage current (see Typical Performance Characteris-
tics) increasing the quiescent current of the LT3470
converter.
APPLICATIO S I FOR ATIO
WU
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