參數(shù)資料
型號(hào): LT3014
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 小信號(hào)晶體管
英文描述: 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
中文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: 0.280 INCH, PM-4
文件頁(yè)數(shù): 1/1頁(yè)
文件大?。?/td> 31K
代理商: LT3014
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 10 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
22
UNITS
V
BV
CES
V
BE
= 0 V I
C
= 10 mA
50
V
BV
EBO
I
E
= 1.0 mA
3.5
V
h
FE
V
CE
= 5.0 V I
C
= 100 mA
20
200
---
P
G
V
CE
= 20 V
I
CQ
= 150 mA f = 1.0 GHz
3.0
3.5
GHz
P
1dB
V
CE
= 20 V
I
CQ
= 150 mA f = 1.0 GHz
27
29
dBm
I
P3
V
CE
= 20 V
I
CQ
= 150 mA f = 1.0 GHz
P
OUT
=
10 dBm
(2 EQUAL TONES)
48
dBm
C
ob
V
CB
= 28 V
f = 1.0 MHz
2.0
3.0
pF
f
t
V
CE
= 20 V
I
CQ
= 150 mA f = 1.0 GHz
3.0
3.5
GHz
NPN SILICON RF POWER TRANSISTOR
LT3014
DESCRIPTION:
The
ASI LT3014
is a Common
Emitter Device Designed for General
Purpose Class A and AB Amplifier
Applications up to 1.0 GHz.
FEATURES INCLUDE:
Gold Metalization
Emitter Ballasting
High Gain
MAXIMUM RATINGS
I
C
300 mA
V
CB
45 V
P
DISS
5.0 W @ T
C
= 25
O
C
-55
O
C to +200
O
C
-55
O
C to +200
O
C
33.0
O
C/W
T
J
T
STG
q
JC
PACKAGE STYLE .280 4L STUD
1 = COLLECTOR 2 & 4 = EMITTER
3 = BASE
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