- 鎮ㄧ従(xi脿n)鍦ㄧ殑浣嶇疆锛�璨疯常IC缍�(w菐ng) > PDF鐩寗3316 > LT1990ACS8 (Linear Technology)IC AMP DIFF +/-250V MCRPWR 8SOIC PDF璩囨枡涓嬭級
鍙冩暩(sh霉)璩囨枡
| 鍨嬭櫉锛� | LT1990ACS8 |
| 寤犲晢锛� | Linear Technology |
| 鏂囦欢闋佹暩(sh霉)锛� | 16/16闋� |
| 鏂囦欢澶�?銆�?/td> | 0K |
| 鎻忚堪锛� | IC AMP DIFF +/-250V MCRPWR 8SOIC |
| 妯�(bi膩o)婧�(zh菙n)鍖呰锛� | 100 |
| 鏀惧ぇ鍣ㄩ鍨嬶細 | 宸垎 |
| 闆昏矾鏁�(sh霉)锛� | 1 |
| 杓稿嚭椤炲瀷锛� | 婊挎摵骞� |
| 杞�(zhu菐n)鎻涢€熺巼锛� | 0.55 V/µs |
| -3db甯跺锛� | 105kHz |
| 闆诲 - 杓稿叆鍋忕Щ锛� | 900µV |
| 闆绘祦 - 闆绘簮锛� | 140µA |
| 闆绘祦 - 杓稿嚭 / 閫氶亾锛� | 22mA |
| 闆诲 - 闆绘簮锛屽柈璺�/闆欒矾(±)锛� | 2.7 V ~ 36 V锛�±1.35 V ~ 18 V |
| 宸ヤ綔婧害锛� | 0°C ~ 70°C |
| 瀹夎椤炲瀷锛� | 琛ㄩ潰璨艰 |
| 灏佽/澶栨锛� | 8-SOIC锛�0.154"锛�3.90mm 瀵級 |
| 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁濓細 | 8-SO |
| 鍖呰锛� | 绠′欢 |
LT1990
9
1990fb
LT1990H
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
VOSH
Input Offset Voltage Hysteresis, RTI
(Note 11)
鈼�
250
V
PSRR
Power Supply Rejection Ratio, RTI
VS = 卤1.35V to 卤18V
鈼�
77
dB
Minimum Supply Voltage
Guaranteed by PSRR
鈼�
卤1.35
V
IS
Supply Current
鈼�
330
A
VOUT
Output Voltage Swing
鈼�
卤14.2
V
ISC
Output Short-Circuit Current
Short to V鈥�
鈼�
1.5
mA
Short to V+
鈼�
7mA
SR
Slew Rate
G = 1, VOUT = 卤10V
鈼�
0.1
V/
s
卤15V ELECTRICAL CHARACTERISTICS
The
鈼� denotes the specifications which apply over the temperature range of 鈥�40
掳C 鈮� TA 鈮� 125掳C. VS = 卤15V, RL = 10k, VCM = VREF = 0V,
G = 1, 10, unless otherwise noted. (Notes 4, 6)
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: ESD (Electrostatic Discharge) sensitive device. Extensive use of
ESD protection devices are used internal to the LT1990, however, high
electrostatic discharge can damage or degrade the device. Use proper ESD
handling precautions.
Note 3: A heat sink may be required to keep the junction temperature
below absolute maximum.
Note 4: The LT1990C/LT1990I are guaranteed functional over the
operating temperature range of 鈥� 40
掳C to 85掳C. The LT1990H is
guaranteed functional over the operating temperature range of 鈥�40
掳C
to 125
掳C.
Note 5: The LT1990C is guaranteed to meet the specified performance
from 0
掳C to70掳C and is designed, characterized and expected to meet
specified performance from 鈥�40
掳C to 85掳C but is not tested or QA
sampled at these temperatures. The LT1990I is guaranteed to meet
specified performance from 鈥�40
掳C to 85掳C. The LT1990H is guaranteed to
meet specified performance from 鈥�40
掳C to 125掳C.
Note 6: G = 10 limits are guaranteed by correlation to G = 1 tests and gain
error tests at G = 10.
Note 7: Limits are guaranteed by correlation to 鈥�5V to 80V CMRR tests.
Note 8: VS = 3V limits are guaranteed by correlation to VS = 5V and
VS = 卤15V tests.
Note 9: VS = 5V limits are guaranteed by correlation to VS = 3V and
VS = 卤15V tests.
Note 10: This parameter is not 100% tested.
Note 11: Hysteresis in offset voltage is created by package stress that
differs depending on whether the IC was previously at a higher or lower
temperature. Offset voltage hysteresis is always measured at 25
掳C, but the
IC is cycled to 85
掳C I-grade (70掳C C-grade or 125掳C H-grade) or 鈥�40掳C
I/H-grade (0
掳C C-grade) before successive measurement.
鐩搁棞(gu膩n)PDF璩囨枡 |
PDF鎻忚堪 |
|---|---|
| RT0603DRD071K8L | RES 1.8K OHM 1/10W .5% 0603 SMD |
| RT0603DRD071K2L | RES 1.2K OHM 1/10W .5% 0603 SMD |
| KA4558D | IC OPAMP DUAL 8-SOP |
| KA358D | IC OPAMP DUAL HI GAIN 8-SOP |
| RT0603DRD078K2L | RES 8.2K OHM 1/10W .5% 0603 SMD |
鐩搁棞(gu膩n)浠ｇ悊鍟�/鎶€琛�(sh霉)鍙冩暩(sh霉) |
鍙冩暩(sh霉)鎻忚堪 |
|---|---|
| LT1990ACS8#PBF | 鍔熻兘鎻忚堪:IC AMP DIFF +/-250V MCRPWR 8SOIC RoHS:鏄� 椤炲垾:闆嗘垚闆昏矾 (IC) >> Linear - Amplifiers - Instrumentation 绯诲垪:- 鐢�(ch菐n)鍝佸煿瑷�(x霉n)妯″:Differential Circuit Design Techniques for Communication Applications 妯�(bi膩o)婧�(zh菙n)鍖呰:1 绯诲垪:- 鏀惧ぇ鍣ㄩ鍨�:RF/IF 宸垎 闆昏矾鏁�(sh霉):1 杓稿嚭椤炲瀷:宸垎 杞�(zhu菐n)鎻涢€熺巼:9800 V/µs 澧炵泭甯跺绌�:- -3db甯跺:2.9GHz 闆绘祦 - 杓稿叆鍋忓:3µA 闆诲 - 杓稿叆鍋忕Щ:- 闆绘祦 - 闆绘簮:40mA 闆绘祦 - 杓稿嚭 / 閫氶亾:- 闆诲 - 闆绘簮锛屽柈璺�/闆欒矾(±):3 V ~ 3.6 V 宸ヤ綔婧害:-40°C ~ 85°C 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:16-VQFN 瑁搁湶鐒婄洡锛孋SP 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁�:16-LFCSP-VQ 鍖呰:鍓垏甯� (CT) 鐢�(ch菐n)鍝佺洰閷勯爜闈�:551 (CN2011-ZH PDF) 鍏跺畠鍚嶇ū:ADL5561ACPZ-R7CT |
| LT1990ACS8#TR | 鍔熻兘鎻忚堪:IC AMP DIFF +/-250V MCRPWR 8SOIC RoHS:鍚� 椤炲垾:闆嗘垚闆昏矾 (IC) >> Linear - Amplifiers - Instrumentation 绯诲垪:- 妯�(bi膩o)婧�(zh菙n)鍖呰:1 绯诲垪:- 鏀惧ぇ鍣ㄩ鍨�:閫氱敤 闆昏矾鏁�(sh霉):4 杓稿嚭椤炲瀷:婊挎摵骞� 杞�(zhu菐n)鎻涢€熺巼:0.6 V/µs 澧炵泭甯跺绌�:1MHz -3db甯跺:- 闆绘祦 - 杓稿叆鍋忓:2pA 闆诲 - 杓稿叆鍋忕Щ:1000µV 闆绘祦 - 闆绘簮:85µA 闆绘祦 - 杓稿嚭 / 閫氶亾:20mA 闆诲 - 闆绘簮锛屽柈璺�/闆欒矾(±):1.8 V ~ 6 V 宸ヤ綔婧害:-40°C ~ 125°C 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:14-SOIC锛�0.154"锛�3.90mm 瀵級 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁�:14-SOICN 鍖呰:鍓垏甯� (CT) 鐢�(ch菐n)鍝佺洰閷勯爜闈�:680 (CN2011-ZH PDF) 鍏跺畠鍚嶇ū:MCP6L04T-E/SLCT |
| LT1990ACS8#TRPBF | 鍔熻兘鎻忚堪:IC AMP DIFF +/-250V MCRPWR 8SOIC RoHS:鏄� 椤炲垾:闆嗘垚闆昏矾 (IC) >> Linear - Amplifiers - Instrumentation 绯诲垪:- 妯�(bi膩o)婧�(zh菙n)鍖呰:1 绯诲垪:- 鏀惧ぇ鍣ㄩ鍨�:閫氱敤 闆昏矾鏁�(sh霉):4 杓稿嚭椤炲瀷:婊挎摵骞� 杞�(zhu菐n)鎻涢€熺巼:0.6 V/µs 澧炵泭甯跺绌�:1MHz -3db甯跺:- 闆绘祦 - 杓稿叆鍋忓:2pA 闆诲 - 杓稿叆鍋忕Щ:1000µV 闆绘祦 - 闆绘簮:85µA 闆绘祦 - 杓稿嚭 / 閫氶亾:20mA 闆诲 - 闆绘簮锛屽柈璺�/闆欒矾(±):1.8 V ~ 6 V 宸ヤ綔婧害:-40°C ~ 125°C 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:14-SOIC锛�0.154"锛�3.90mm 瀵級 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁�:14-SOICN 鍖呰:鍓垏甯� (CT) 鐢�(ch菐n)鍝佺洰閷勯爜闈�:680 (CN2011-ZH PDF) 鍏跺畠鍚嶇ū:MCP6L04T-E/SLCT |
| LT1990AHS8 | 鍒堕€犲晢:Linear Technology 鍔熻兘鎻忚堪:SP Amp DIFF AMP Single R-R O/P 卤18V/36V 8-Pin SOIC N 鍒堕€犲晢:Linear Technology 鍔熻兘鎻忚堪:SP Amp DIFF AMP Single R-R O/P 18V/36V 8-Pin SOIC N |
| LT1990AHS8#PBF | 鍔熻兘鎻忚堪:IC AMP DIFF +/-250V MCRPWR 8SOIC RoHS:鏄� 椤炲垾:闆嗘垚闆昏矾 (IC) >> Linear - Amplifiers - Instrumentation 绯诲垪:- 妯�(bi膩o)婧�(zh菙n)鍖呰:50 绯诲垪:LinCMOS™ 鏀惧ぇ鍣ㄩ鍨�:閫氱敤 闆昏矾鏁�(sh霉):4 杓稿嚭椤炲瀷:- 杞�(zhu菐n)鎻涢€熺巼:0.05 V/µs 澧炵泭甯跺绌�:110kHz -3db甯跺:- 闆绘祦 - 杓稿叆鍋忓:0.7pA 闆诲 - 杓稿叆鍋忕Щ:210µV 闆绘祦 - 闆绘簮:57µA 闆绘祦 - 杓稿嚭 / 閫氶亾:30mA 闆诲 - 闆绘簮锛屽柈璺�/闆欒矾(±):3 V ~ 16 V锛�±1.5 V ~ 8 V 宸ヤ綔婧害:-40°C ~ 85°C 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:14-SOIC锛�0.154"锛�3.90mm 瀵級 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁�:14-SOIC 鍖呰:绠′欢 鐢�(ch菐n)鍝佺洰閷勯爜闈�:865 (CN2011-ZH PDF) 鍏跺畠鍚嶇ū:296-1834296-1834-5 |
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