ABSOLUTE MAXIMU
參數(shù)資料
型號(hào)： LT1920IS8#PBF
廠商： Linear Technology
文件頁(yè)數(shù)： 5/12頁(yè)
文件大小： 0K
描述： IC AMP INSTRUMENT PREC LP 8SOIC
標(biāo)準(zhǔn)包裝： 100
放大器類型： 儀表
電路數(shù)： 1
轉(zhuǎn)換速率： 1.2 V/µs
增益帶寬積： 1MHz
電流 - 輸入偏壓： 500pA
電壓 - 輸入偏移： 30µV
電流 - 電源： 900µA
電流 - 輸出 / 通道： 27mA
電壓 - 電源，單路/雙路(±)： 4.6 V ~ 36 V，±2.3 V ~ 18 V
工作溫度： -40°C ~ 85°C
安裝類型： 表面貼裝
封裝/外殼： 8-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝： 8-SO
包裝： 管件
2
LT1920
ABSOLUTE MAXIMUM RATINGS
W
WW
U
ORDER PART
NUMBER
PACKAGE/ORDER INFORMATION
W
U
LT1920CN8
LT1920CS8
LT1920IN8
LT1920IS8
S8 PART MARKING
1920
1920I
1
2
3
4
8
7
6
5
TOP VIEW
RG
–IN
+IN
–VS
RG
+VS
OUTPUT
REF
N8 PACKAGE
8-LEAD PDIP
S8 PACKAGE
8-LEAD PLASTIC SO
+
–
TJMAX = 150°C, θJA = 130°C/ W (N8)
TJMAX = 150°C, θJA = 190°C/ W (S8)
(Note 1)
Supply Voltage ......................................................
±20V
Differential Input Voltage (Within the
Supply Voltage) .....................................................
±40V
Input Voltage (Equal to Supply Voltage) ................
±20V
Input Current (Note 3) ........................................
±20mA
Output Short-Circuit Duration .......................... Indefinite
Operating Temperature Range ................ – 40
°C to 85°C
Specified Temperature Range
LT1920C (Note 4) .................................... 0
°C to 70°C
LT1920I .............................................. – 40
°C to 85°C
Storage Temperature Range ................. – 65
°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300
°C
Consult factory for Military grade parts.
ELECTRICAL CHARACTERISTICS V
S = ± 15V, VCM = 0V, TA = 25°C, RL = 2k, unless otherwise noted.
SYMBOL
PARAMETER
CONDITIONS (Note 6)
MIN
TYP
MAX
UNITS
G
Gain Range
G = 1 + (49.4k/RG)
1
10k
Gain Error
G = 1
0.008
0.1
%
G = 10 (Note 2)
0.010
0.3
%
G = 100 (Note 2)
0.025
0.3
%
G = 1000 (Note 2)
0.040
0.35
%
G/T
Gain vs Temperature
G < 1000 (Note 2)
q
20
50
ppm/
°C
Gain Nonlinearity (Note 5)
VO = ±10V, G = 1
10
ppm
VO = ±10V, G = 10 and 100
10
30
ppm
VO = ±10V, G = 100 and 1000
20
ppm
VOST
Total Input Referred Offset Voltage
VOST = VOSI + VOSO/G
VOSI
Input Offset Voltage
G = 1000, VS = ±5V to ±15V
30
125
V
G = 1000, VS = ±5V to ±15V
q
185
V
VOSI/T
Input Offset Drift (RTI)
(Note 3)
q
1
V/°C
VOSO
Output Offset Voltage
G = 1, VS = ±5V to ±15V
400
1000
V
G = 1, VS = ±5V to ±15V
q
1500
V
VOSO/T
Output Offset Drift
(Note 3)
q
515
V/°C
IOS
Input Offset Current
0.3
1
nA
IB
Input Bias Current
0.5
2
nA
en
Input Noise Voltage, RTI
0.1Hz to 10Hz, G = 1
2.00
VP-P
0.1Hz to 10Hz, G = 10
0.50
VP-P
0.1Hz to 10Hz, G = 100 and 1000
0.28
VP-P
Total RTI Noise =
√e
ni
2 + (eno/G)2
eni
Input Noise Voltage Density, RTI
fO = 1kHz
7.5
nV/
√Hz
eno
Output Noise Voltage Density, RTI
fO = 1kHz
67
nV/
√Hz
in
Input Noise Current
fO = 0.1Hz to 10Hz
10
pAP-P
Input Noise Current Density
fO = 10Hz
124
fA/
√Hz
RIN
Input Resistance
VIN = ±10V
200
G
CIN(DIFF)
Differential Input Capacitance
fO = 100kHz
1.6
pF
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