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參數(shù)資料
| 型號(hào)： | LT120 |
| 廠商： | Sharp Corporation |
| 英文描述： | Hall Voltage 160mV GaAs Hall Device |
| 中文描述： | 霍爾電壓160mV的砷化鎵霍爾器件 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大小： | 22K |
| 代理商： | LT120 |
Fig. 1 Hall Voltage vs. Ambient
Temperature
Fig. 2 Input Resistance vs. Ambient
Temperature
2 000
Fig. 6 Power Dissipation vs. Ambient
Temperature
200
Fig. 5 Hall Voltage vs. Control Voltage
Fig. 3 Hall Voltage vs. Magnetic Flux
Density
2 000
Fig. 4 Hall Voltage vs. Control Current
LT120A
Hall Device
V
C
=6V
T
a
=25C
00
800
400
200
Magnetic flux density B (mT)
600
1 000
1 600
1 200
800
400
H
H
(
00
80
40
120
160
200
160
120
80
40
P
D
(
Ambient temperature T
a
(C)
B=0mT
I
M
=1mA
020
0
80
40
120
1 600
1 200
800
400
I
I
(
)
Ambient temperature T
a
(C)
B=100mT
T
a
=25C
00
8
4
12
400
320
240
160
80
H
H
(
Control current I
C
(mA)
B=100mT
020
0
80
40
120
200
160
120
80
40
H
H
(
Ambient temperature T
a
(C)
V
C
=6V
I
C
=6mA
B=100mT
T
a
=25C
00
8
4
12
400
320
240
160
80
H
H
(
Control voltage V
C
(V)
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