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參數(shù)資料
| 型號： | LT1161IS |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1-of-8 Data Selectors/Multiplexers With 3-State Outputs 16-PDIP 0 to 70 |
| 中文描述： | 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20 |
| 封裝： | SOIC-20 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 290K |
| 代理商： | LT1161IS |
9
LT1161
APPLICATIO
S I
N
FOR
ATIO
U
W
U
10
μ
F
R
S1
0.2
R
0.02
1
μ
F
1161 F09b
15V
1N4744
15V
1N4744
1N4148
51
51
51
LT1161
8V TO 24V
V
+
V
+
DS1
G1
G2
DS2
+
HV
LOAD
HV
LOAD
T1
1
μ
F
T2
IRF630
IRF630
HV
2N2222
–
+
1/2
LT1013
2N2222
Figure 9b. Low-Side Drivers with Two Approaches
for Source Current Sensing
Current sensing for protecting low-side drivers can be
done in several different ways. In the Figure 9a circuit, the
supply voltage for the load is assumed to be within the
supply operating range of the LT1161. This allows the load
to be returned to supply through current-sense resistor
R
S
, providing normal operation of the LT1161 protection
circuitry.
If the load cannot be returned to supply through R
S
, or the
load supply voltage is higher than the LT1161 supply, the
current sense must be moved to the source of the low-side
MOSFET. Figure 9b shows two approaches to source
sensing. On channel 1, current limit occurs when the
voltage across sense resistor R
S1
thresholds the V
BE
of the
NPN transistor, causing the LT1161 drain sense pin to be
pulled down.
The channel 2 circuit of Figure 9b uses an operational
amplifier (must common mode to ground) to level shift the
voltage across R
S2
up to the drain sense pin. This ap-
proach allows the use of a much smaller sense resistor
which could be made from PC trace material. In both
cases, the LT1161 restart timers function the same as in
high-side switch applications.
TYPICAL APPLICATIO
N
S
+
1
μ
F
LT1161
1161 TA05
IRFZ44
IRFZ44
IRFZ44
24V
R
S
INPUTS
(MAY BE PARALLELED)
GND
T1
IN1
T2
IN2
T3
IN3
T4
IN4
GND
V
+
DS1
G1
DS2
G2
DS3
G3
DS4
G4
V
+
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
10
μ
F
50V
OUTPUTS
(MAY BE PARALLELED)
15k
100k
+
Using an Extra Channel to Do Common Current Limit for Multiple/Paralleled Switches
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LT1161ISW | 功能描述:IC MOSFET DRIVER N-CH QUAD20SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1161ISW#PBF | 功能描述:IC MOSFET DRIVER N-CH QUAD20SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:95 系列:- 配置:高端和低端，獨立 輸入類型:非反相 延遲時間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導啟動）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF) |
| LT1161ISW#PBF | 制造商:Linear Technology 功能描述:IC MOSFET DRIVER HIGH SIDE SOIC-20 |
| LT1161ISW#TR | 功能描述:IC DVR MOSFET N-CH QUAD 20-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1161ISW#TRPBF | 功能描述:IC MOSFET DRIVER NCH QUAD 20SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
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