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參數(shù)資料
| 型號(hào)： | LT1161CS |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Quad Protected High-Side MOSFET Driver |
| 中文描述： | 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20 |
| 封裝： | SO-20 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 290K |
| 代理商： | LT1161CS |
5
LT1161
OPERATIOU
The LT1161 gate pin has two states, OFF and ON. In the
OFF state it is held low, while in the ON state it is pumped
to 12V above supply by a self-contained 750kHz charge
pump. The OFF state is activated when either the input pin
is below 1.4V or the timer pin is below 3V. Conversely, for
the ON state to be activated, both the input and timer pins
must be above their thresholds.
If left open, the input pin is held low by a 75k resistor, while
the timer pin is held a diode drop above 3V by a 14
μ
A pull-
up current source. Thus the timer pin automatically re-
verts to the ON state, subject to the input also being high.
The input has approximately 200mV of hysteresis.
The sense pin normally connects to the drain of the power
MOSFET, which returns through a low valued drain sense
resistor to supply. When the gate is ON and the MOSFET
drain current exceeds the level required to generate a
65mV drop across the drain sense resistor, the sense
comparator activates a pull-down NPN which rapidly pulls
the timer pin below 3V. This in turn causes the timer
comparator to override the input pin and activate the gate
pin OFF state, thus protecting the power MOSFET. In order
for the sense comparator to accurately sense MOSFET
drain current, the LT1161 supply pins must be connected
directly to the positive side of the drain sense resistors.
When the MOSFET gate voltage is less than 1.4V, the timer
pin is released. The 14
μ
A current source then slowly
charges the timing capacitor back to 3V where the charge
pump again starts to drive the gate pin high. If a fault still
exists, such as a short circuit, the sense comparator
threshold will again be exceeded and the timer cycle will
repeat until the fault is removed (see Figure 2).
INPUT
1161 F02
OFF
NORMAL
OVERCURRENT
NORMAL
12V
V
+
GATE
0V
3V
0V
TIMER
Figure 2. Timing Diagram
APPLICATIO
S I
N
FOR
ATIO
U
Input/Supply Sequencing
There are no input/supply sequencing requirements for
the LT1161. The input may be taken up to 15V with the
supply at 0V. When the supply is turned on with an input
high, the MOSFET turn-on will be inhibited until the timing
capacitor charges to 3V (i.e., for one restart cycle). The
two V
+
pins (11, 20) must always be connected to each
other.
W
U
Isolating the Inputs
Operation in harsh environments may require isolation to
prevent ground transients from damaging control logic.
The LT1161 easily interfaces to low cost opto-isolators.
The network shown in Figure 3 ensures that the input will
be pulled above 2V, but not exceed the absolute maximum
LT1161
12V TO 48V
IN
GND
100k
1161 F03
2k
LOGIC
INPUT
1/4 NEC PS2501-4
LOGIC
GND
POWER
GROUND
51k
GND
(Each Channel, Refer to Functional Diagram)
Figure 3. Isolating the Inputs
rating, for supply voltages of 12V to 48V over the entire
temperature range. In order to maintain the OFF state, the
opto must have less than 20
μ
A of dark current (leakage)
hot.
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| LT1161CSW | 功能描述:IC MOSFET DRIVER N-CH QUAD20SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1161CSW#PBF | 功能描述:IC MOSFET DRIVER N-CH QUAD20SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端，獨(dú)立 輸入類型:非反相 延遲時(shí)間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF) |
| LT1161CSW#TR | 功能描述:IC DVR MOSFET N-CH QUAD 20-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1161CSW#TRPBF | 功能描述:IC MOSFET DRIVER NCH QUAD 20SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1161CSWPBF | 制造商:Linear Technology 功能描述:MOSFET Driver Quad Protected SOIC20W |
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