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參數(shù)資料
| 型號(hào)： | LT1161CN |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Quad Protected High-Side MOSFET Driver |
| 中文描述： | 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP20 |
| 封裝： | 0.300 INCH, PLASTIC, DIP-20 |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大小： | 290K |
| 代理商： | LT1161CN |
6
LT1161
APPLICATIO
S I
FOR
ATIO
U
Drain Sense Configuration
The LT1161 uses supply-referenced current sensing. One
input of each channel’s current-sense comparator is con-
nected to a drain sense pin, while the second input is offset
65mV below the supply bus inside the device. For this
reason, pins 11 and 20 of the LT1161 must be treated not
only as supply pins, but as the reference inputs for the
current-sense comparators.
Figure 4 shows the proper drain sense configuration for
the LT1161. Note that the sense pin goes to the drain end
of the sense resistor, while the two V
+
pins are tied to each
other and connected to supply at the same point as the
positive ends of the sense resistors. Local supply
decoupling at the LT1161 is important at high input
voltages (see Protecting Against Supply Transients).
The drain sense threshold voltage has a positive tempera-
ture coefficient, allowing PTC sense resistors to be used
(see Printed Circuit Board Shunts). The selection of R
S
should be based on the minimum threshold voltage:
W
U
U
R
mV
I
S
SET
=
50
Thus the 0.02
drain sense resistor in Figure 4 would yield
a minimum trip current of 2.5A. This simple configuration
is appropriate for resistive or inductive loads which do not
generate large current transients at turn-on.
Automatic Restart Period
The timing capacitor C
T
shown in Figure 4 determines the
length of time the power MOSFET is held off following a
current limit trip. Curves are given in the Typical Perfor-
mance Characteristics to show the restart period for
various values of C
T
. For example, C
T
= 0.33
μ
F yields a
50ms restart period.
Defeating Automatic Restart
Some applications are required to remain off after a fault
occurs. When the LT1161 is being driven from CMOS
logic, this can be easily implemented by connecting
resistor R1 between the input and timer pins as shown in
Figure 5. R1 supplies the sustaining current for an SCR
which latches the timer pin low. This prevents the MOSFET
gate from turning ON until the input has been recycled.
LT1161
ON = 5V
OFF = 0V
TIMER
R1
2k
1161 F05
INPUT
5V
CMOS
LOGIC
Figure 5. Latch-Off Input Network (Auto-Restart Defeated)
Inductive vs Capacitive Loads
Turning on an inductive load produces a relatively benign
ramp in MOSFET current. However, when an inductive
load is turned off, the current stored in the inductor needs
somewhere to decay. A clamp diode connected directly
across each inductive load normally serves this purpose.
If a diode is not employed the LT1161 clamps the MOSFET
gate 0.7V below ground. This causes the MOSFET to
resume conduction during the current decay with (V
+
+
V
GS
+ 0.7V) across it, resulting in high dissipation peaks.
Capacitive loads exhibit the opposite behavior. Any load
that includes a decoupling capacitor will generate a cur-
rent equal to C
LOAD
×
(
V/
t) during capacitor in-rush.
With large electrolytic capacitors, the resulting current
LT1161
T1
V
+
V
+
1161 F04
24V
10
μ
F
100
μ
F
50V
24V, 2A
SOLENOID
IRFZ34
R
S
0.02
(PTC)
C
T
1
μ
F
GND
GND
G1
DS1
+
+
Figure 4. Drain Sense Configuration
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| LT1161CN#PBF | 功能描述:IC MOSFET DRIVER N-CH QUAD 20DIP RoHS:是 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類(lèi)型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類(lèi)型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱(chēng):835-1063 |
| LT1161CS | 制造商:LINER 制造商全稱(chēng):Linear Technology 功能描述:Quad Protected High-Side MOSFET Driver |
| LT1161CSW | 功能描述:IC MOSFET DRIVER N-CH QUAD20SOIC RoHS:否 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類(lèi)型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類(lèi)型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱(chēng):835-1063 |
| LT1161CSW#PBF | 功能描述:IC MOSFET DRIVER N-CH QUAD20SOIC RoHS:是 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端，獨(dú)立 輸入類(lèi)型:非反相 延遲時(shí)間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類(lèi)型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁(yè)面:1381 (CN2011-ZH PDF) |
| LT1161CSW#TR | 功能描述:IC DVR MOSFET N-CH QUAD 20-SOIC RoHS:否 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類(lèi)型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類(lèi)型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱(chēng):835-1063 |
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