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參數(shù)資料
| 型號： | LS256D |
| 廠商： | 意法半導體 |
| 英文描述： | TELEPHONE SPEECH CIRCUIT WITH MULTIFREQUENCY TONE GENERATOR INTERFACE |
| 中文描述： | 電話語音電路的多頻音調發(fā)生器接口 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 84K |
| 代理商： | LS256D |
Figure3.
Figure 4.
V
RO
V
RI
G
R
=
V
G
MF
=VMF
ELECTRICAL CHARACTERISTICS
(refer to the test circuits, S1, S2 in (a),
T
amb
= – 25 to + 50
o
C, f = 200 to 3400Hz, unless otherwise specified)
Symbol
SPEECH OPERATION
V
L
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Fig.
Line Voltage
T
amb
= 25
°
C
I
L
= 12mA
I
L
= 20mA
I
L
= 80mA
3.9
4.7
5.5
12.2
V
CMRR
G
S
Common Mode Rejection
Sending Gain
f = 1kHz, I
L
= 12 to 80mA
T
amb
= 25
°
C, f = 1kHz
V
MI
= 2mV
50
44
48
dB
dB
1
2
I
L
= 52mA
I
L
= 25mA
45
49
46
50
Sending Gain Flatness
V
MI
= 2mV, f
= 1kHz
I
L
= 12 to 80mA
f = 1kHz
I
L
= 16 to 80mA
V
MI
= 0V; I
L
= 40mA; S1 in (b)
V
MI
= 2mV, I
L
= 12 to 80mA
±
1
dB
2
Sending Distortion
V
SO
= 1V
V
SO
= 1.3V
2
10
%
2
Sending Noise
Microphone Input
Impedance Pin 1-16
Sending Loss in MF
Operation
Receiving Gain
–68.5
dBmp
k
2
40
V
MI
= 2mV
S
2
in (b)
V
R1
= 0.3V, f = 1kHz, T
amb
= 25
°
C
I
L
= 52mA
I
L
= 25mA
– 30
– 30
dB
2
G
R
L
= 52mA
I
L
= 25mA
2.5
7
3.5
8
4.5
9
±
1
dB
3
Receiving Gain Flatness
V
RI
= 0.3V, f
= 1kHz
I
L
= 12 to 80mA
f = 1kHz
dB
3
Receiving Distortion
I
L
= 12mA V
RO
= 1.6V
I
L
= 12mA V
RO
= 1.9V
I
L
= 50mA V
RO
= 1.8V
I
L
= 50mA V
RO
= 2.1V
2
10
2
10
%
3
Receiving Noise
Receiver Output
Impedance Pin 12-13
V
RI
= 0V; I
L
= 12 to 80mA; S1 in (b)
V
RO
= 50mV, I
L
= 40mA
100
μ
V
3
100
LS256
4/8
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