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參數(shù)資料
| 型號(hào)： | LQB08A |
| 廠商： | National Semiconductor Corporation |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | Single-Ended Input Motor Driver |
| 中文描述： | 單端輸入電機(jī)驅(qū)動(dòng)器 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 616K |
| 代理商： | LQB08A |
Application Information
(Continued)
GAIN SETTING
The resistors R
IN
and R
F
set the gain of the LM4570, given
by:
V
VD
= 2 x (R
F
/ R
IN
)
Where A
VD
is the differential gain. A
VD
differs from single-
ended gain by a factor of 2. This doubling is due to the
differential output architecture of the LM4570. Driving the
load differentially doubles the output voltage compared to a
single-ended output amplifier under the same conditions.
POWER DISSIPATION
The Power Dissipation vs. Supply Voltage graph in the Op-
erating Curves section shows the power dissipation of the
LM4570 with the input equal to the supply voltage, meaning
the outputs swing rail-to-rail. This configuration results in the
output devices of the LM4570 operating in the linear region,
essentially very small resistors determined by the R
of
the output devices. Under these conditions, the power dissi-
pation is dominated by the I*R drop associated with the
output current across the R
of the output transistors,
thus the power dissipation is very low (60mW for a 800mW
output).
When the input voltage is not equal to GND or V
, the
power dissipation of the LM4570 increases (Figure 3). Under
these conditions, the output devices operate in the satura-
tion region, where the devices consume current in addition to
the current being steered to the load, increasing the power
dissipation. Power dissipation for typical motor driving appli-
cations should not be an issue since the most of the time the
device outputs will be driven rail-to-rail.
EXPOSED-DAP MOUNTING CONSIDERATIONS
The LM4570 is available in an 8-pin LLP package which
features an exposed DAP (die attach paddle). The exposed
DAP provides a direct thermal conduction path between the
die and the PCB, improving the thermal performance by
reducing the thermal resistance of the package. Connect the
exposed DAP to GND through a large pad beneath the
device, and multiple vias to a large unbroken GND plane.
For best thermal performance, connect the DAP pad to a
GND plane on an outside layer of the PCB. Connecting the
DAP to a plane on an inner layer will result in a higher
thermal resistance. Ensure efficient thermal conductivity by
plugging and tenting the vias with plating and solder mask,
respectively.
POWER SUPPLY BYPASSING
Good power supply bypassing is critical for proper operation.
Locate both the REF1 and V
DD
bypass capacitors as close
to the device as possible. Typical applications employ a
regulator with a 10μF tantalum or electrolytic capacitor and a
ceramic bypass capacitor which aid in supply stability. This
does not eliminate the need for bypass capacitors near the
LM4570. Place a 1μF ceramic capacitor as close to V
as
possible. Place a 0.1μF capacitor as close to REF1 as
possible. Smaller values of C
REF1
may be chosen for de-
creased turn on times.
SHUTDOWN FUNCTION
The LM4570 features a low power shutdown mode that
disables the device and reduces quiescent current con-
sumption to 0.1μA. Driving /SD Low disables the amplifiers
and bias circuitry, and drives V
and the outputs to GND.
Connect /SD to V
DD
for normal operation.
20186328
FIGURE 3. Power Dissipation vs. Input Voltage
L
www.national.com
9
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