參數(shù)資料
型號： LPC3250FET296/01,5
廠商： NXP Semiconductors
文件頁數(shù)： 40/57頁
文件大?。?/td> 0K
描述： IC ARM9 MCU 256K 296-TFBGA
標(biāo)準(zhǔn)包裝： 126
系列： LPC3200
核心處理器： ARM9
芯體尺寸： 16/32-位
速度： 266MHz
連通性： EBI/EMI，以太網(wǎng)，I²C，IrDA，Microwire，SPI，SSI，SSP，UART/USART，USB OTG
外圍設(shè)備： DMA，I²S，LCD，電機控制 PWM，PWM，WDT
輸入/輸出數(shù)： 51
程序存儲器類型： ROMless
RAM 容量： 256K x 8
電壓 - 電源 (Vcc/Vdd)： 0.9 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 3x10b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 296-TFBGA
包裝： 托盤
其它名稱： 568-4962
935290766551
LPC3220_30_40_50
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 20 October 2011
45 of 79
NXP Semiconductors
LPC3220/30/40/50
16/32-bit ARM microcontrollers
9.
Limiting values
[1]
The following applies to Table 7:
a) This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive
static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated
maximum.
b) Parameters are valid over operating temperature range unless otherwise specified. All voltages are with respect to VSS unless
otherwise noted.
[2]
Core, PLL, oscillator, and RTC supplies; applies to pins VDD_CORE, VDD_COREFXD, VDD_OSC, VDD_PLL397, VDD_PLLHCLK,
VDD_PLLUSB, VDD_RTC, VDD_RTCCORE, and VDD_RTCOSC.
[3]
I/O pad supply; applies to domains VDD_EMC.
[4]
Applies to VDD_AD pins.
[5]
Applies to pins in the following domains VDD_IOA, VDD_IOB, VDD_IOC, and VDD_IOD.
[6]
Including voltage on outputs in 3-state mode.
[7]
Based on package heat transfer, not device power consumption. Calculated package thermal resistance (ThetaJA): 35.766 C/W (with
JEDEC Test Board and 0 m/s airflow,
15 % accuracy).
[8]
Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 k
series resistor.
[9]
Charge device model per AEC-Q100-011.
Table 7.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).[1]
Symbol
Parameter
Conditions
Notes Min
Max
Unit
VDD(1V2)
supply voltage (1.2 V)
0.5
+1.4
V
VDD(EMC)
external memory controller
supply voltage
0.5
+4.6
V
VDDA(3V3) analog supply voltage (3.3 V)
0.5
+4.6
V
VDD(IO)
input/output supply voltage
0.5
+4.6
V
VIA
analog input voltage
0.5
+4.6
V
VI
input voltage
1.8 V pins
0.5
+2.4
V
3.3 V pins
0.5
+4.6
V
IDD
supply current
per supply pin
-
100
mA
ISS
ground current
per ground pin
-
100
mA
Tstg
storage temperature
65
+150
C
Ptot(pack)
total power dissipation
(per package)
max. junction temp 125
C
max. ambient temp 85
C
[7] -1.12
W
VESD
electrostatic discharge voltage
HBM
2500
V
CDM
1000
V
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