參數(shù)資料
型號(hào)： LP5996SD-3308
廠商： NATIONAL SEMICONDUCTOR CORP
元件分類(lèi)： 基準(zhǔn)電壓源/電流源
英文描述： Dual Linear Regulator with 300mA and 150mA Outputs
中文描述： DUAL OUTPUT, FIXED POSITIVE LDO REGULATOR, DSO10
封裝： 3 X 3 MM, LLP-10
文件頁(yè)數(shù)： 6/14頁(yè)
文件大?。?/td> 750K
代理商： LP5996SD-3308
Electrical Characteristics
(Notes 2, 8) (Continued)
Unless otherwise noted, V
EN
= 950mV, V
IN
= V
OUT
+ 1.0V, or 2.0V, whichever is higher, where V
is the higher of V
and V
. C
= 1 μF, I
= 1 mA, C
= C
= 1.0μF. Typical values and limits appearing in normal type apply for T
A
= 25C. Limits appearing in
boldface
type apply over the full junction temperature range for operation, 40 to +125C.
Symbol
Parameter
Conditions
Typ
Limit
Units
Min
Max
PSRR
Power Supply Rejection Ratio
(Note 11)
f = 1kHz, I
OUT
= 1mA to
150mA
C
BYP
= 10nF
f = 20kHz, I
OUT
= 1mA to
150mA
C
BYP
= 10nF
BW = 10Hz to
100kHz
C
BYP
= 10nF
Temperature
Hysteresis
LDO1
58
dB
LDO2
70
LDO1
45
LDO2
60
e
n
Output noise Voltage (Note 11)
V
OUT
= 0.8V
36
μV
RMS
V
OUT
= 3.3V
75
T
SHUTDOWN
Thermal Shutdown
160
20
C
Enable Control Characteristics
I
EN
Input Current at V
EN1
or V
EN2
V
EN
= 0.0V
V
EN
= 6V
0.005
2
0.1
5
0.4
μA
V
IL
V
IH
Timing Characteristics
T
ON
Low Input Threshold
High Input Threshold
V
V
0.95
Turn On Time (Note 11)
To 95% Level
C
BYP
= 10nF
T
rise
= T
fall
= 10μs
δ
V
IN
= 1VC
BYP
= 10nF
T
rise
= T
fall
=
1μs
300
μs
Transient
Response
Line Transient Response |
δ
V
OUT
|
(Note 11)
Load Transient Response
|
δ
V
OUT
|
(Note 11)
20
mV
(pk - pk)
LDO 1
I
OUT
= 1mA to
150mA
LDO 2
I
OUT
= 1mA to
300mA
175
150
Note 1:
Absolute Maximum Ratings are limits beyond which damage can occur. Operating Ratings are conditions under which operation of the device is
guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the Electrical
Characteristics tables.
Note 2:
All Voltages are with respect to the potential at the GND pin.
Note 3:
For detailed soldering specifications and information, please refer to National Semiconductor Application Note AN-1187, Leadless Leadframe Package.
Note 4:
Internal thermal shutdown circuitry protects the device from permanent damage.
Note 5:
The human body model is 100pF discharged through a 1.5k
resistor into each pin. The machine model is a 200pF capacitor discharged directly into each
pin.
Note 6:
The maximum ambient temperature (T
A(max)
) is dependant on the maximum operating junction temperature (T
J(max-op)
= 125C), the maximum power
dissipation of the device in the application (P
D(max)
), and the junction to ambient thermal resistance of the part/package in the application (
θ
JA
), as given by the
following equation: T
A(max)
= T
J(max-op)
- (
θ
JA
x P
D(max)
).
Note 7:
Junction to ambient thermal resistance is dependant on the application and board layout. In applications where high maximum power dissipation is possible,
special care must be paid to thermal dissipation issues in board design.
Note 8:
Min Max limits are guaranteed by design, test or statistical analysis. Typical numbers are not guaranteed, but do represent the most likely norm.
Note 9:
V
IN(MIN)
= V
OUT(NOM)
+ 0.5V, or 2.0V, whichever is higher.
Note 10:
Dropout voltage is voltage difference between input and output at which the output voltage drops to 100mV below its nominal value. This parameter only
for output voltages above 2.0V
Note 11:
This electrical specification is guaranteed by design.
L
www.national.com
6
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