
Absolute Maximum Ratings
(Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V (SW, FB, ROUT, GOUT, BOUT)
V
DDA
, V
DDD
, V
DDIO
, V
LDO
Voltage on Logic Pins
-0.3V to 22V
-0.3V to 6.0V
-0.3V to V
DDIO
0.3V
with 6.0V max
Continuous Power Dissipation
(Note 3)
Junction Temperature (T
J-MAX
)
Storage Temperature Range
Maximum Lead Temperature
(Soldering) (Note 4)
ESD Rating (Note 5)
Internally Limited
125°C
-65°C to 150°C
Human Body Model:
Machine Model:
Operating Ratings
(Notes 1, 2)
V (SW, FB, MAIN, SUB)
V
DDA,DDD
V
DDIO
Recommended Load Current
(ROUT, GOUT, BOUT)
Junction Temperature (T
J
) Range
Ambient Temperature (T
A
) Range
(Note 6)
Thermal Properties
Junction-to-Ambient Thermal
Resistance(
θ
JA
), TLA25 Package
(Note 7)
2 kV
200V
0 to 21V
2.9 to 5.5V
1.65V to V
DDA
0 mA to 60 mA /driver
-30°C to 125°C
-30°C to 85°C
60 - 100°C/W
Electrical Characteristics
(Notes 2, 8)
Limits in standard typeface are for T
J
= 25°C. Limits in
boldface
type apply over the operating ambient temperature range (-30°C
< T
J
< 85°C). Unless otherwise noted, specifications apply to the LP5520 Block Diagram with: C
VDDA/D
= 100 nF, C
OUT
= 2 x 4.7
μF/ 25V, C
IN
= 10 μF / 6.3V, L1 = 4.7 μH (Note 9).
Symbol
Parameter
I
VDD
Standby supply current
(V
DDA
+ V
DDD
)
NSTBY = L , V
DDIO
= 0V
No-boost supply current
(V
DDA
+ V
DDD
)
EN_BOOST = L
No-load supply current
(V
DDA
+ V
DDD
)
AUTOLOAD = L
I
VDDIO
V
DDIO
Standby Supply current
NSTBY = L
V
LDO
Internal LDO output voltage
I
LDO
Internal LDO output current
Current to external load
Condition
Min
Typ
1.7
Max
7
Units
μA
NSTBY = L, V
DDIO
≥
1.65V
1
μA
NSTBY = H,
0.9
mA
NSTBY = H, EN_BOOST = H
1.4
mA
1
μA
V
IN
≥
2.9V
2.77
2.80
2.84
V
1
mA
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation
of the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions,
see the Electrical Characteristics tables.
Note 2:
All voltages are with respect to the potential at the GND pins.
Note 3:
Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at T
J
=160°C (typ.) and disengages at
T
J
=140°C (typ.).
Note 4:
For detailed soldering specifications and information, please refer to National Semiconductor Application Note AN1112 : MicroSMD Wafer Level Chip
Scale Package
Note 5:
The Human body model is a 100 pF capacitor discharged through a 1.5 k
resistor into each pin. The machine model is a 200 pF capacitor discharged
directly into each pin. MIL-STD-883 3015.7
Note 6:
In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be
derated. Maximum ambient temperature (T
A-MAX
) is dependent on the maximum operating junction temperature (T
= 125°C), the maximum power
dissipation of the device in the application (P
), and the junction-to ambient thermal resistance of the part/package in the application (
θ
JA
), as given by the
following equation: T
A-MAX
= T
J-MAX-OP
– (θ
JA
× P
D-MAX
).
Note 7:
Junction-to-ambient thermal resistance is highly application and board-layout dependent. In applications where high maximum power dissipation exists,
special care must be paid to thermal dissipation issues in board design.
Note 8:
Min and Max limits are guaranteed by design, test or statistical analysis. Typical numbers are not guaranteed but do represent the most likely norm.
Note 9:
Low-ESR Surface-Mount Ceramic Capacitors (MLCCs) used in setting electrical characteristics.
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