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參數(shù)資料
| 型號： | LP5520 |
| 廠商： | National Semiconductor Corporation |
| 元件分類： | LED驅(qū)動器 |
| 英文描述： | RGB Backlight LED Driver |
| 中文描述： | RGB背光LED驅(qū)動器 |
| 文件頁數(shù)： | 13/34頁 |
| 文件大小： | 790K |
| 代理商： | LP5520 |
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The EEPROM data can be read, written and erased through
the serial interface. The boost converter is used to generate
the write and erase voltage for the memory. All operations are
done in page mode. The page address has to be written in
the
EEPROM_control
register before access to the EEP-
ROM. Incremental access can be used both in I2C and SPI
modes to speed up access. During EEPROM access the
<rgb_auto>
control bit in
rgb control
register must be low.
The EEPROM has 4 pages; only one page at time can be
mirrored at the register map. For getting access to page, the
number of page must be set by
<ee_page[1:0]>
bits in the
EEPROM_control
register(0DH). The page register address
range is from 40H to 5FH.
<ee_page[1:0]>
(bits1-0)
00
01
10
11
page0 (00H-1FH)
page1 (20H-3FH)
page2 (40H-5FH)
page3 (60H-7FH)
Actually the EEPROM consist of two type of memory, 128 x
8 EEPROM (Non Volatile Memory) and 128 x 8 SRAM (Syn-
chronous Random Access Memory). The EEPROM is used
to store calibrated RGB control values when the system is
powered off. SRAM is used as working memory during oper-
ation.
20186116
EEPROM content is copied into SRAM always when the chip
is taken from stand-by mode to active mode. Copying to
SRAM can also be made during operation by writing the
<ee_read>
bit high and low in the
EEPROM control
(0DH)
register. For reading the data from the SRAM, the page num-
ber must be set with
<ee_page[1:0]>
bits and the page read
from addresses 40H – 5FH.
The EEPROM must be erased before programming. The
erase command will erase one page at time, which must be
selected with
<ee_page[1:0]>
bits. This operation starts after
setting and resetting
<ee_erase>
and takes about 100 ms
after rising
<ee_erase>
bit. During erasing
<ee_prog>
bit of
the
EEPROM_CONTROL
register is low. Corresponding
SRAM area will be erased with this operation also.
<ee_erase>
and
<ee_prog>
can be set only one command
at a time (erase or program).
During programming the content of SRAM is copied to EEP-
ROM. EEPROM programming cycle has two steps. At first,
write the whole content of the SRAM, all 4 pages. The whole
page can be written during one SPI/I
2
C cycle in the auto-in-
crement mode. Second step is programming the EEPROM.
This operation starts after writing
<ee_prog>
high and back
low and takes about 100 ms after rising
<ee_prog>
bit. During
programming
<ee_prog>
bit of the
EEPROM_CONTROL
register is low. For EEPROM erasing and programming the
chip has to be in active mode (
<NSTBY>
high), the boost must
be off (
<in_boost>
low) and the boost voltage set to 18V
(
boost output
register value 12H).
13
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LP5520TL | RGB Backlight LED Driver |
| LP5520TLX | RGB Backlight LED Driver |
| LP5521 | Programmable Three Channel LED Driver |
| LP5521TM | Programmable Three Channel LED Driver |
| LP5521TMX | Programmable Three Channel LED Driver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LP5520TL | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:RGB Backlight LED Driver |
| LP5520TL/NOPB | 功能描述:LED照明驅(qū)動器 RoHS:否 制造商:STMicroelectronics 輸入電壓:11.5 V to 23 V 工作頻率: 最大電源電流:1.7 mA 輸出電流: 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SO-16N |
| LP5520TLX | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:RGB Backlight LED Driver |
| LP5520TLX/NOPB | 功能描述:LED照明驅(qū)動器 RoHS:否 制造商:STMicroelectronics 輸入電壓:11.5 V to 23 V 工作頻率: 最大電源電流:1.7 mA 輸出電流: 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SO-16N |
| LP5521 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:Programmable Three Channel LED Driver |
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