參數(shù)資料
型號: LP3939
廠商: National Semiconductor Corporation
英文描述: Power Amplifier Driver For Dual Band CDMA Handsets
中文描述: 功率放大器驅(qū)動器雙頻段CDMA手機
文件頁數(shù): 3/7頁
文件大?。?/td> 116K
代理商: LP3939
Absolute Maximum Ratings
(Notes 1,
2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
DD1
, V
DD2
EN_CELL, EN_PCS,
GAIN_MODE, INV_A1,
INV_A2, PA_ON, INV_Y1,
CELL_ON, CELL_GAIN,
PCS_ON, PCS_GAIN, INV_Y2
and A1_SINK
GND to GND SLUG
Junction Temperature
Maximum Power Dissipation
(Note 3)
0.3V to +6.0V
0.3V to (V
DD
+ 0.3V)
±
0.3V
150C
2.0W
Storage Temperature
ESD (Note 4):
Human Body Model
Machine Model
65C to +150C
2 kV
200V
Operating Ratings
(Notes 1, 2)
V
DD1
, V
DD2
Junction Temperature
Operating Temperature
Thermal Resistance
θ
JA
(LLP16)
Maximum Power Dissipation
(Note 5)
1.8V to 5.5V
40C to +125C
40C to +85C
39.8C/W
1.38W
DC Electrical Characteristics
Unless otherwise noted, V
DD1
= V
DD2
= 3V. Typical values and limits appearing in normal type apply for T
J
= 25C. Limits ap-
pearing in
boldface type
apply over the entire junction temperature range for operation, 40C to +85C. (Note 6)
Symbol
Parameter
Conditions
Typ
Limit
Units
Min
Max
5
I
IN
I
Q
Input Current
Quiescent Current
All Input Pins
All inputs tied to V
DD
or ground.
No load at the outputs.
CELL_ON, PCS_ON
CELL_GAIN, PCS_GAIN
A1_SINK
P-Ch, V
DD
= 3V
CELL_ON, PCS_ON
CELL_GAIN, PCS_GAIN
P-Ch, V
DD
= 2V
CELL_ON, PCS_ON
CELL_GAIN, PCS_GAIN
1.8V
V
DD
<
2.5V
EN_CELL, EN_PCS, INV_A1,
GAIN_MODE, INV_A2
2.5V
V
DD
3.5V
EN_CELL, EN_PCS, INV_A1,
GAIN_MODE, INV_A2
1.8V
V
DD
3.5V
EN_CELL, EN_PCS, INV_A1,
GAIN_MODE, INV_A2
PA_ON, INV_Y1,
I
SOURCE
= 1 mA
INV_Y2,
I
SOURCE
= 1 mA
PA_ON, INV_Y1, I
SINK
= 1 mA
INV_Y2, A1_SINK
I
SINK
= 1 mA
0.05
μA
0.002
5
μA
I
LEAKAGE
Output Leakage Current
10
μA
5
R
DS-ON
MOSFET’s ON Resistance
275
500
m
430
650
V
IH
Logic High Input
1.4
V
2.0
V
IL
Logic Low Input
0.4
V
V
OH
Logic High Output
2.93
2.8
V
2.74
2.5
V
OL
Logic Low Output
80
200
mV
16
55
L
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