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參數(shù)資料
| 型號： | LP0701ND |
| 廠商： | SUPERTEX INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel Enhancement-Mode Lateral MOSFET |
| 中文描述： | 16.5 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | DIE |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 32K |
| 代理商： | LP0701ND |
7-23
LP0701
P-Channel Enhancement-Mode
Lateral MOSFET
BV
DSS
/
BV
DGS
R
DS(ON)
(max)
I
D(ON)
(min)
V
GS(th)
(max)
TO-92
SO-8
Die
-16.5V
1.5
-1.25A
-1.0V
LP0701N3
LP0701LG
LP0701ND
Ordering Information
Order Number / Package
Advanced MOS Technology
These enhancement-mode (normally-off) transistors utilize a lat-
eral MOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and negative temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown. The low threshold voltage and low on-
resistance characteristics are ideally suited for hand held battery
operated applications.
Applications
Logic level interfaces
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
10V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
300
°
C
*
Distance of 1.6 mm from case for 10 seconds.
Features
Ultra low threshold
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Freedom from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Package Options
(Note 1)
Note: See Package Outline section for dimensions.
Low Threshold
S G D
TO-92
1
2
3
4
8
7
6
5
SO-8
top view
NC
D
NC
D
S
D
G
D
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