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參數(shù)資料
| 型號： | LMX2353SLBX |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | XO, clock |
| 英文描述： | PLLatinum⑩ Fractional N Single 2.5 GHz Frequency Synthesizer |
| 中文描述： | PHASE LOCKED LOOP, 2500 MHz, CQCC16 |
| 封裝： | PLASTIC, CSP-16 |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 210K |
| 代理商： | LMX2353SLBX |
Absolute Maximum Ratings
(Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Power Supply Voltage
V
CC
Vp
Voltage on any pin with
GND = 0V (V
I
)
Storage Temperature Range (T
S
)
Lead Temperature (solder, 4 sec.) (T
L
)
ESD - Human Body Model (Note 2)
0.3V to 6.5V
0.3V to 6.5V
0.3V to V
CC
+0.3V
65C to +150C
+260C
2 kV
Recommended Operating
Conditions
Power Supply Voltage
V
CC
Vp
Operating Temperature (T
A
)
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur. Operating Ratings indicate conditions for which the de-
vice is intended to be functional, but do not guarantee specific performance
limits. For guaranteed specifications and test conditions, see the Electrical
Characteristics. The guaranteed specifications apply only for the test condi-
tions listed.
Note 2:
This device is a high performance RF integrated circuit and is ESD
sensitive. Handling and assembly of this device should only be done at ESD
free workstations.
2.7V to 5.5V
V
CC
to 5.5V
40C to +85C
Electrical Characteristics
(V
CC
= Vp = 3.0V; 40C
<
T
A
<
85C except as specified).
Symbol
Parameter
Conditions
Value
Typ
Unit
Min
Max
GENERAL
I
CC
I
CC-PWDN
f
IN
f
OSC
f
φ
Pf
IN
Power Supply Current
Power Down Current
RF Operating Frequency
Oscillator Frequency
Phase Detector Frequency
RF Input Sensitivity
4.5
5
mA
μA
GHz
MHz
MHz
dBm
dBm
V
PP
CE = LOW
(Note 3)
(Note 3)
0.5
2
2.5
50
10
0
0
V
CC
V
CC
= 3.0V
V
CC
= 5.0V
OSC
IN
15
10
0.5
V
OSC
CHARGE PUMP
ICP
o-source
Oscillator Sensitivity
Charge Pump Output Current
VCP
o
= Vp/2,
CP_WORD = 0000
VCP
o
= Vp/2,
CP_WORD = 0000
VCP
o
= Vp/2,
CP_WORD = 1111
VCP
o
= Vp/2,
CP_WORD = 1111
0.5
≤
VCP
o
≤
Vp 0.5,
40C
<
T
A
<
85C
VCP
o
= Vp/2, T
A
= 25C
100
μA
ICP
o-sink
100
μA
ICP
o-source
1.6
mA
ICP
o-sink
1.6
mA
ICP
o-TRI
Charge Pump TRI-STATE
Current
CP Sink vs Source Mismatch
500
pA
ICP
o-sink
vs
ICP
o-source
ICP
o
vs
VCP
o
ICP
o
vs T
VOLTAGE DOUBLER
V
D-ON
3
%
CP Current vs Voltage
0.5
≤
VCP
o
≤
Vp 0.5, T
A
= 25C
8
%
CP Current vs Temperature
VCP
o
= Vp/2, 40C
<
T
A
<
85C
8
%
Voltage Doubler Turn on Time
OSC
IN
= 10 MHz, C
ext
= 0.1 μF
V
P
Settled to within
±
10%
2.7V
≤
V
CC
≤
3.3V,
Doubler Enabled
2.7V
≤
V
CC
≤
3.3V,
Doubler Enabled
TBD
μs
V
CPO
Charge Pump Output Voltage
2 x V
CC
1.0
2 x V
CC
0.5
V
V
P DOUBLER
Doubler Voltage at V
P
Pin
V
DIGITAL INTERFACE (DATA, CLK, LE, EN, F
o
LD)
V
IH
High-Level Input Voltage
(Note 4)
0.8 x
V
CC
V
V
IL
Low-Level Input Voltage
(Note 4)
0.2 x
V
CC
V
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